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Citation: Liu Xiu-Xi, Xue Cheng-Shan, Sun Ying, Zhao Fu-Xian, Wang Xian-Ming, Li Yu-Guo. Gallium Doping Effect in Bare Silicon System and SiO₂/Si System[J]. Acta Physico-Chimica Sinica, ;1997, 13(02): 153-157. doi: 10.3866/PKU.WHXB19970210 shu

Gallium Doping Effect in Bare Silicon System and SiO₂/Si System

1.
Semiconductor Research Institute,Shandong Normal University,Jinan 250014

Received Date: 1 May 1996
Available Online: 15 February 1997

Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .
- Open-tube diffusion,
- Bare silicon system,
- SiO₂/Si system,
- Doping effect
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沈阳化工大学材料科学与工程学院沈阳 110142

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Gallium Doping Effect in Bare Silicon System and SiO2/Si System

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Gallium Doping Effect in Bare Silicon System and SiO₂/Si System