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Citation: Pu Zong, Zhou Wei-Fang. Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Flim(II)[J]. Acta Physico-Chimica Sinica, ;1994, 10(04): 348-353. doi: 10.3866/PKU.WHXB19940412 shu

Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Flim(II)

Pu Zong ,
Zhou Wei-Fang

1.
Department of Chemistry, Fudan University, Shangahi 200433

Received Date: 4 September 1992
Available Online: 15 April 1994

The semiconducting properties of t-PbO (also known as tet-PbO or α-PbO) in the anodic plumbous oxide films formed on lead, lead-arseinc, lead-animony and lead bismuth alloys in 4.5 mol·L~(-1) H_2SO_4(22 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 7 h have been studied using measu-rements of photo-electrochemical current. These elements have little effect on the values of the band-gap energy of t-PbO and o-PbO in the film. From the relation between quantum yield and electrode potential, the values of the donor density of the t-PbO in the films formed on Pb, Pb-lat%As, Pb-lat%Sb and Pb-lat%Bi are 9.3×10~(15)，1.0×10~(16)，3.1×10~(16) and 1.3×10~(17) cm~(-3), respectively. Meanwhile, the corresponding flat-band potentials range from -0.08 to -0.28 V(vs. Hg/Hg_2SO_4). By comparing the effect of these VA elements on the growth rate of the t-PbO with that on the donor density, it is concluded that these experimental results condorm to the Hauffe Rules.
- Anodic plumbous oxide film,
- Semiconductor,
- Photoelectrochemical current method,
- Hauffe rules
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