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Pu Cong, Zhou Wei-Fang. Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Film (I)[J]. Acta Physico-Chimica Sinica,
;1994, 10(03): 260-265.
doi:
10.3866/PKU.WHXB19940313
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The semiconducting properties of the anodic plumbous oxide films formed on lead, lead-arsenic, lead-antimony and lead-bismuth alloys in 4.5 mol·L~(-1) H_2SO_4 (20 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 2 h have been studied using a. c. impedance method. From the Mott-Schottky plots, the films are demonstrated to be n-type senilconductors. The flat-band potentials of the films on Pb, Pb-lat %As, Pb-lat %Sb and Pb-lat %Bi are -0.95, -1.1, -1.0 and -1.1 V(vs. Hg/Hg_2SO_4), respectively; while the corresponding donor densities are 0.82×10~(16), 2.6×10~(16), 1.2×10~(17) and 0.71×10~(16) cm~(-3).
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