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Citation: Pu Cong, Zhou Wei-Fang. Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Film (I)[J]. Acta Physico-Chimica Sinica, ;1994, 10(03): 260-265. doi: 10.3866/PKU.WHXB19940313 shu

Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Film (I)

Pu Cong ,
Zhou Wei-Fang

1.
Department of Chemistry, Fudan University, Shanghai 200433

Received Date: 4 September 1992
Available Online: 15 March 1994

The semiconducting properties of the anodic plumbous oxide films formed on lead, lead-arsenic, lead-antimony and lead-bismuth alloys in 4.5 mol·L~(-1) H_2SO_4 (20 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 2 h have been studied using a. c. impedance method. From the Mott-Schottky plots, the films are demonstrated to be n-type senilconductors. The flat-band potentials of the films on Pb, Pb-lat %As, Pb-lat %Sb and Pb-lat %Bi are -0.95, -1.1, -1.0 and -1.1 V(vs. Hg/Hg_2SO_4), respectively; while the corresponding donor densities are 0.82×10~(16), 2.6×10~(16), 1.2×10~(17) and 0.71×10~(16) cm~(-3).
- Anodic plumbous oxide film,
- Semiconductor,
- Electrochemical impedance method,
- Hauffe rules
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