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Citation: Qian Dao-Sun, Zhu Zhen-Hua, Zhao Jun. A Study of Breakdown Process Between n-InP/Solution Interface at Irradiation[J]. Acta Physico-Chimica Sinica, ;1994, 10(01): 61-63. doi: 10.3866/PKU.WHXB19940114 shu

A Study of Breakdown Process Between n-InP/Solution Interface at Irradiation

1.
Department of Applied Chemistry, Shanghai Jiao Tong University, Shanghai 200030

Received Date: 25 May 1992
Available Online: 15 January 1994

In this work, the tunneling breakdown of n-InP electrode using large signal current density step has been investigated. The influence of current density on the tunneling breakdown is not obvious, but the light intensities affect the breakdown severely. Some parameters are calculated during breakown and explained.
- Indium phosphide,
- Semiconducting electrode,
- Photoelectrochemistry,
- Large signal current step method
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