Citation: Qian Dao-Sun, Zhao Jun. Transient Behavior of n-InP/Fe3+, Fe2+ Interface Using Small Current Step[J]. Acta Physico-Chimica Sinica, ;1992, 8(02): 202-206. doi: 10.3866/PKU.WHXB19920212
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In this paper the transient behavior of n-InP semiconductor electrode in Fe~(3+)/Fe~(2+) solution using current step method is studied. From the equivalent circuit of the n-InP electrode under irradiation, a theoretical model for the change of photopoten-tial is derived in the presence of a small signal. The results of the experiments confirm the derivation. On the basis of the experiments and the theoretical model we also develop a method for measuring the capacitance of the space charge layer (C_(sc)). The observation of the influences of various light intensities is studied also.
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