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Citation: Li Yu-Lin, Qin Qi-Zong. Enhancement Effect of Translational Energy on Laser Induced Gas-Surface Etching Reactions[J]. Acta Physico-Chimica Sinica, ;1990, 6(03): 308-312. doi: 10.3866/PKU.WHXB19900311 shu

Enhancement Effect of Translational Energy on Laser Induced Gas-Surface Etching Reactions

Li Yu-Lin ,
Qin Qi-Zong

1.
Laser Chemistry Laboratory, Fudan University, Shanghai

Received Date: 28 November 1988
Available Online: 15 June 1990

The enhancement effect of translational energy of incident molecules on the laser induced gas-surface reactions is studied using a CW supersonic molecular beam technique coupled with time-resolved mass spectrometry. For the visible (560 nm) lasre induced etching reactions of Cl_2 with Ge(111), Si(111) and GaAs(100) surfaces the reaction yields increase obviously with increasing translational energy of incident Cl_2 molecules. There appears to be a translational energy threshold which has a value of 5—7 kJ·mol~(-1) for different etching reactions. Moreover, the dependence of the translational temperatures of the desorbed reaction products on incident translational energy of Cl_2 molecules is investigated by the measured TOF spectra of the products. The results can be explained by the promotion of dissociative chemisorption Cl_2 molecules on semiconductor surface with raising of the incident Cl_2 translational energy.
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