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Citation: Xu Songlin, Zhuang Qixing, Wu Liyun, Wu Zhenyao. STUDY ON THE MODIFICATION OF SEMICONDUCTOR PHOTOELECTRODE BY PLASMA POLYMERIZATION——POLYACRYLONITRILE/n-GaAs, n-GaP ELECTRODES[J]. Acta Physico-Chimica Sinica, ;1987, 3(06): 648-652. doi: 10.3866/PKU.WHXB19870617 shu

STUDY ON THE MODIFICATION OF SEMICONDUCTOR PHOTOELECTRODE BY PLASMA POLYMERIZATION——POLYACRYLONITRILE/n-GaAs, n-GaP ELECTRODES

1.
Chemistry Department, Xiamen University
Fujian Institute of Oceanograph

Received Date: 19 June 1986
Available Online: 15 December 1987

Polyacrylonitrile (PAN) film attached to n-GaAs, n-GaP photoelectrode surface by plasma polymerization has been studied. Both electrochemical behaviors and stability of the modified electrodes have been investigated. The results showed that the semiconductor electrodes with PAN film decreased photocorrosion in a certain degree, and their electrochemical characteristics and stability were improved remarkably after plasma doping.
Cyclic voltammetric analysis demonstrated that the redox reaction occurred in I-PAN films could be carried out rapidly on electrode surfaces, in favor of the capture and transfer of photoinduced holes by the films to redox couples in solution.
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