Citation:
Jianjun Liu, Xue Yang, Chi Zhang, Xueyu Zhao, Zhiwei Zhang, Yongmei Chen, Qinghong Xu, Shao Jin. Preparation and Fluorescence Characterization of CdTe Semiconductor Quantum Dots[J]. University Chemistry,
;2024, 39(7): 307-315.
doi:
10.3866/PKU.DXHX202311031
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Semiconductor quantum dots, composed of elements from groups II–VI (CdSe, CdTe, CdS, ZnTe, ZnO), III–V (InAs, GaSb, InP) and IV (Si, Ge), are nanoscale particles attracting significant research interest. The focus of current studies lies predominantly on II–VI group quantum dots like CdS, CdSe, and CdTe, known for their narrow band gaps and exceptional fluorescent properties intrinsically related to quantum size effects. In this study, a straightforward aqueous reflux method was employed, using thioglycolic acid as a stabilizer, and NaHTe as a Te precursor. Over a period of 3 h, CdTe semiconductor quantum dots of various colors were prepared, addressing and mitigating the issue of oxidation susceptibility during NaHTe transfer. The fluorescence luminescence properties of the product were meticulously analyzed, yielding a series of CdTe quantum dots with an impressive quantum efficiency of 48%. This experimental approach is notable for its simplicity, minimal reagent consumption, and distinct fluorescence characteristics, making it highly operable and replicable. It is well-suited for undergraduate education in inorganic chemistry, instrumental analysis, and comprehensive professional experiments.
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