Citation: Hao LI, Kui XIE. Enhanced Supercapacitance with Porous Single-crystalline GaN Electrode[J]. Chinese Journal of Structural Chemistry, ;2021, 40(8): 1005-1011. doi: 10.14102/j.cnki.0254–5861.2011–3093 shu

Enhanced Supercapacitance with Porous Single-crystalline GaN Electrode

Hao LI ^{a, b} ,
Kui XIE ^b,,

a.
College of Chemical Engineering, Fuzhou University, Fuzhou 350116, China
b.
Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

Corresponding author: Kui XIE, kxie@fjirsm.ac.cn
Received Date: 12 January 2021
Accepted Date: 5 March 2021

Fund Project: the National Key Research and Development Program of China 2017YFA0700102Natural Science Foundation of China 91845202Dalian National Laboratory for Clean Energy DNL180404Strategic Priority Research Program of Chinese Academy of Sciences XDB2000000

Figures(4)

Capacitance is generally determined by the porous microstructure, electron conduction and the synergy effect of active sites in the porous electrode. In this work, we grew centimeter-scale metallic porous GaN single crystals with conductivity up to 18 S/cm at room temperature. The Cu-catecholates (Cu–CAT) nanowire arrays were grown on porous GaN single crystal to form porous single-crystalline electrode with enhanced supercapacitor performance. The Cu–CAT/GaN single crystalline electrode exhibits specific capacitance of 216 F/g and normalized capacitance of 40 µF/cm². After 5000 cycles, it retains 80% of its initial capacitance. The porous single-crystalline GaN electrode has high porosity and excellent conductivity showing high surface capacitance.
- supercapacitance,
- GaN single crystal,
- Cu–CAT nanowire arrays,
- single-crystalline electrode
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