Citation: Qian-Kun JU, Wen-Ting HONG, Wei LIU. Grain Boundary Effects on the Mobility of Chemical Vapor Deposition Synthesized Monolayer MoS₂-FETs[J]. Chinese Journal of Structural Chemistry, ;2021, 40(4): 512-518. doi: 10.14102/j.cnki.0254–5861.2011–2934 shu

Grain Boundary Effects on the Mobility of Chemical Vapor Deposition Synthesized Monolayer MoS₂-FETs

Qian-Kun JU ^{a, b} ,
Wen-Ting HONG ^{a, b} ,
Wei LIU ^{a, b, c,,}

a.
CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
b.
University of Chinese Academy of Sciences, Beijing 100049, China
c.
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China

Corresponding author: Wei LIU, liuw@fjirsm.ac.cn
Received Date: 3 July 2020
Accepted Date: 1 September 2020

Fund Project: the National Natural Science Foundation of China 61674152

Figures(7)

Molybdenum disulphide (MoS₂) has emerged as a promising candidate for low-power digital applications. However, grain boundaries play a decisive role in determining the carrier mobility and performance of MoS₂-FETs. In this work, we report a systematic study on the grain boundary of chemical vapor deposition (CVD) MoS₂. We found that in the ON-state, if current flows across a grain boundary that is aligned perpendicular to the channel length, the current of CVD MoS₂-FETs can be significantly reduced, while in the OFF-state, the effect is negligible. Metal-insulator-transition is clearly observed, indicating the high quality of our CVD samples, and it is also shown that grain boundaries increase the metal-insulator-transition crossover-voltage in MoS₂-FETs. Thereby, this work provides useful information and guidance in understanding the nature of carrier transport in synthesized MoS₂ devices, and the developed framework can be applied to other 2D semiconductors in general, as well as in optimizing the CVD process and device design with 2D materials.
- grain boundary,
- golybdenum disulfide,
- ghemical vapor deposition,
- field-effect transistor
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沈阳化工大学材料科学与工程学院沈阳 110142

Grain Boundary Effects on the Mobility of Chemical Vapor Deposition Synthesized Monolayer MoS2-FETs

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Grain Boundary Effects on the Mobility of Chemical Vapor Deposition Synthesized Monolayer MoS₂-FETs