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Citation: Chao-Hua ZHANG, Yi-Bo WANG, Jun-Qin LI, Fu-Sheng LIU. Phase and Defect Engineering of GeTe-based Alloys for High Thermoelectric Performance[J]. Chinese Journal of Structural Chemistry, ;2020, 39(5): 821-830. doi: 10.14102/j.cnki.0254–5861.2011–2850 shu

Phase and Defect Engineering of GeTe-based Alloys for High Thermoelectric Performance

  • College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China

  • Corresponding author: Chao-Hua ZHANG, zhangch@szu.edu.cn Jun-Qin LI, junqinli@szu.edu.cn
  • Received Date: 15 April 2020
    Accepted Date: 7 May 2020

    Fund Project: the National Natural Science Foundation of China 21805196Natural Science Foundation of Guangdong Province, China 2018A030310416Natural Science Foundation of Guangdong Province, China 2019A1515010832

Figures(4)

  • The widespread applications of thermoelectric (TE) materials in power generation and solid-state cooling require improving their TE figure of merit (ZT) significantly. Recently, GeTe-based alloys have shown great promise as mid-temperature TE materials with superhigh TE performance, mostly due to their relatively high-degeneracy band structures and low lattice thermal conductivity. In this perspective, we review the most recent progress of the GeTe-based TE alloys from the view of phase and defect engineering. These two strategies are the most widely-used and efficient approaches in GeTe-based alloys to optimize the transport properties of electrons and phonons for high ZT. The phase transition from rhombohedral to cubic structure is believed to improve the band convergence of GeTe-based alloys for higher electrical performance. Typical defects in GeTe-based alloys include the point defects from Ge vacancies and substitutional dopants, linear and planar defects from Ge vacancies. The defect engineering of GeTe-based alloys is important not only for optimizing the carrier density but also for tuning the band structure and phonon-scattering processes. The summarized strategies in this review can also be used as a reference for guiding the further development of GeTe-based alloys and also other TE materials.
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