Citation: QIU Yuming, JIANG Yihang, LU Guanghao. Application Progress of Doping in Organic Field-Effect Transistors[J]. Chinese Journal of Applied Chemistry, ;2019, 36(9): 977-995. doi: 10.11944/j.issn.1000-0518.2019.09.190141 shu

Application Progress of Doping in Organic Field-Effect Transistors

Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China

Corresponding author: LU Guanghao, guanghao.lu@mail.xjtu.edu.cn
Received Date: 15 May 2019
Revised Date: 20 June 2019
Accepted Date: 8 July 2019

Fund Project: Supported by the National Natural Science Foundation of China(No.51473132, No.21574103), the China Postdoctoral Science Foundation(No.2015M580841, No.2016T90910)the China Postdoctoral Science Foundation 2016T90910the National Natural Science Foundation of China 51473132the National Natural Science Foundation of China 21574103the China Postdoctoral Science Foundation 2015M580841

Figures(19)

Organic field-effect transistors(OFETs) as a new type of electronic devices have attracted wide attention due to their flexibility and large scale and simple fabrication. However, OFETs are confronted with problems such as inadequate device performance and complex control methods. Researchers endeavor to solve these problems by doping. In this review, we summarize the application of doping technology in OFETs based on the related work of our group and prospect the future development.
- organic field-effect transistors,
- organic semi-conductors,
- doping,
- reactive oxygen
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沈阳化工大学材料科学与工程学院沈阳 110142