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Citation: Zhen FAN, Jiayan WANG, Wenhao ZHU, Xiuchun ZHANG, Yang WANG, Hao LI, Zeyuan WANG, Songzhi ZHENG, Weihai SUN. Fabrication of CsPbBr3 perovskite solar cells using buried polyvinylidene fluorideinterface modification method[J]. Chinese Journal of Inorganic Chemistry, ;2025, 41(12): 2464-2478. doi: 10.11862/CJIC.20250191 shu

Fabrication of CsPbBr3 perovskite solar cells using buried polyvinylidene fluorideinterface modification method

  • Engineering Research Center of Environment-Friendly Functional Materials, Ministry of Education, Fujian Key Laboratory of Photoelectric Functional Materials, Institute of Materials Physical Chemistry, School of Materials Science and Engineering, Huaqiao University, Xiamen, Fujian 361021, China

  • Corresponding author: Weihai SUN, sunweihai@hqu.edu.cn
  • Received Date: 8 June 2025
    Revised Date: 29 October 2025

Figures(8)

  • Polyvinylidene fluoride (PVDF) was used as the burial interface between the electron transport layer (ETL) and CsPbBr3. Due to the interaction between F contained in PVDF and Pb2+ in CsPbBr3, the interaction between the two provides enough nucleation sites for the growth of PbBr2 crystals, which can improve the morphology of PbBr2 films and promote the reaction between PbBr2 and CsBr, providing a framework for the growth of perovskite films, and ultimately obtain high-quality CsPbBr3 perovskite films. As a result, the device with 1 mg·mL-1 PVDF for buried interface modification could achieve the best champion performance among the CsPbBr3 perovskite solar cells (PSCs). The maximum open-circuit voltage (VOC) reached 1.59 V, the short circuit current density (JSC) was 7.43 mA·cm-2, the fill factor (FF) was 79.69% and the power conversion efficiency (PCE) reached 9.41%. After being exposed to the atmospheric environment for 30 d, the PCE of the device still maintained at 99.4% of the initial value.
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