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Citation: Jing-Tao LI, Yang MA, Shao-Xian LI, Ye-Ming HE, Yong-Zhe ZHANG. Defect Engineering of Two - Dimensional Transition Metal Dichalcogenides[J]. Chinese Journal of Inorganic Chemistry, ;2022, 38(6): 993-1015. doi: 10.11862/CJIC.2022.120 shu

Defect Engineering of Two - Dimensional Transition Metal Dichalcogenides

  • 1.

    Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China

  • 2.

    The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing 100124, China

  • 3.

    Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China

  • 4.

    Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei 10608, China

  • Corresponding author: Yang MA, mayang@bjut.edu.cn
  • Received Date: 24 October 2021
    Revised Date: 26 March 2022

Figures(17)

  • Due to their characteristics of atomic-scale thickness, 1-2 eV varying band gaps with the number of layers, high carrier mobility (for example, the carrier mobility of MoS2 can reach 200 cm2·V-1·s-1), etc., two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the potential candidates in the fields of optics and electronics applications. Compared to their bulk counterparts, the properties of TMDs can be more easily influ- enced by defect engineering due to their ultrathin feature. In this review, based on the introduction of TMDs crystal structure and phase, the defects classification is made according to their dimension. Then from two aspects, defect suppression and repair, as well as defect manufacturing, the latest research progress of defect engineering is summa- rized. On this basis, defect engineering applications in the fields of electronics, optics, magnetism, electrocatalysis, etc. are introduced. Finally, this review discusses the practical problems in defect engineering and prospects the future research and development directions in this domain.
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