Citation: Ting ZHAO, Jia-Ying JIAN, Peng-Fan DONG, Hao FENG, Ya-Xin NAN, Fang-E CHANG. Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets[J]. Chinese Journal of Inorganic Chemistry, ;2021, 37(11): 2020-2028. doi: 10.11862/CJIC.2021.235 shu

Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets

Ting ZHAO ^{1, 3} ,
Jia-Ying JIAN ^{2, 3,,} ,
Peng-Fan DONG ^{1, 3} ,
Hao FENG ^{1, 3} ,
Ya-Xin NAN ^{1, 3} ,
Fang-E CHANG ¹

1.
School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China
2.
School of Electronics and Information Engineering, Xi'an Technological University, Xi'an 710021, China
3.
Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China

Corresponding author: Jia-Ying JIAN, jianjiaying@xatu.edu.cn
Received Date: 17 May 2021
Revised Date: 7 September 2021

Figures(8)

Here, SnS₂ nanosheets with the size of 50-100 nm were synthesized by hydrothermal method, and was used as the resistive layer material (Cu/PMMA/SnS₂/Ag, PMMA=polymethyl methacrylate) for the first time. The results showed that the ON/OFF ratio of Cu/PMMA/SnS₂/Ag resistive random access memory was about 10⁵, and the endurance was 2.7×10³. The on-state voltage and off-state voltage were only about 0.28 and -0.19 V, respectively.
- resistive random access memory,
- tin disulfide,
- low operating voltage
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