Citation: Ting ZHAO, Jia-Ying JIAN, Peng-Fan DONG, Hao FENG, Ya-Xin NAN, Fang-E CHANG. Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets[J]. Chinese Journal of Inorganic Chemistry, ;2021, 37(11): 2020-2028. doi: 10.11862/CJIC.2021.235 shu

Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets

Ting ZHAO ^{1, 3} ,
Jia-Ying JIAN ^{2, 3,,} ,
Peng-Fan DONG ^{1, 3} ,
Hao FENG ^{1, 3} ,
Ya-Xin NAN ^{1, 3} ,
Fang-E CHANG ¹

1.
School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China
2.
School of Electronics and Information Engineering, Xi'an Technological University, Xi'an 710021, China
3.
Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi'an 710021, China

Corresponding author: Jia-Ying JIAN, jianjiaying@xatu.edu.cn
Received Date: 17 May 2021
Revised Date: 7 September 2021

Figures(8)

Here, SnS₂ nanosheets with the size of 50-100 nm were synthesized by hydrothermal method, and was used as the resistive layer material (Cu/PMMA/SnS₂/Ag, PMMA=polymethyl methacrylate) for the first time. The results showed that the ON/OFF ratio of Cu/PMMA/SnS₂/Ag resistive random access memory was about 10⁵, and the endurance was 2.7×10³. The on-state voltage and off-state voltage were only about 0.28 and -0.19 V, respectively.
- resistive random access memory,
- tin disulfide,
- low operating voltage
1. [1]
  Guo T, Elshekh H, Yu Z, Yu B, Wang D, Kadhim M S, Chen Y Z, Hou W T, Sun B. Effect of Crystalline State on Conductive Filaments Forming Process in Resistive Switching Memory Devices[J]. Mater. Today Commun., 2019,20:100540-100555. doi: 10.1016/j.mtcomm.2019.100540
2. [2]
  Sharma Y, Pavunny S P, Fachini E, Scott J F, Katiyar R S. Nonpolar Resistive Memory Switching with all Four Possible Resistive Switching Modes in Amorphous LaHoO₃ Thin Films[J]. J. Appl. Phys., 2015,118(9):4506-4514.
3. [3]
  Strukov D B, Snider G S, Stewart D R, Williams R S. The Missing Memristor Found[J]. Nature, 2008,453:80-83. doi: 10.1038/nature06932
4. [4]
  Onofrio N, Guzman D, Strachan A. Atomic Origin of Ultrafast Resistance Switching in Nanoscale Electrometallization Cells[J]. Nat. Mater., 2015,14(4):440-446. doi: 10.1038/nmat4221
5. [5]
  Zhou G D, Sun B, Yao Y Q, Zhang H H, Zhou A K, Alameh K, Ding B F, Song Q L. Investigation of the Behaviour of Electronic Resistive Switching Memory Based on MoSe₂-Doped Ultralong Se Microwires[J]. Appl. Phys. Lett., 2016,109(14):5655-5657.
6. [6]
  Ghoneim M T, Zidan M A, Alnassar M Y, Hanna A N, Kosel J, Salama K N, Hussain M M. Flexible Electronics: Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications[J]. Adv. Electron. Mater., 2015,1(6):1-6.
7. [7]
  Ungureanu M, Zazpe R, Golmar F, Stoliar P, Llopis R, Casanova F, Hueso L E. A Light-Controlled Resistive Switching Memory[J]. Adv. Mater., 2012,24(18):2496-2500. doi: 10.1002/adma.201200382
8. [8]
  Mao S S, Zhang X J, Sun B, Li B, Zhu S H, Zheng P P, Zheng L, Xia Y D. Multi-stage Switching Phenomenon in Ultra-Thin Ag Films Embedded into SrCoO₃ Multilayer Films Constructed Resistive Switching Memory Devices[J]. Funct. Mater. Lett., 2018,2:1850-1857.
9. [9]
  Lv F Z, Gao C X, Zhang P, Dong C H, Zhang C, Xue D S. Bipolar Resistive Switching Behavior of CaTiO₃ Films Grown by Hydrothermal Epitaxy[J]. RSC Adv., 2015,5(51):40714-40718. doi: 10.1039/C5RA02605A
10. [10]
  Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R, Williams R S. Memristive Switches Enable Stateful Logic Operations via Material Implication[J]. Nature, 2010,464:873-876. doi: 10.1038/nature08940
11. [11]
  ZHANG J Q, WU X F, MA X Y, YUAN L, HUANG K K, FEN S H. Amorphous La₀₇₅Sr_0.25MnO₃ Film Prepared by Pulsed Laser Deposition for Translucent Resistive Memory[J]. Chinese J. Inorg. Chem., 2018,34(4):784-790.
12. [12]
  WU X F, YUAN L, HUANG K K, FENG S H. Memristive Effects in Inorganic Solid Materials[J]. Chinese J. Inorg. Chem., 2015,31(9):1726-1738.
13. [13]
  Zhao M, Zhu Y D, Wang Q W, Wei M C, Liu X L, Zhang F, Hu C, Zhang T T, Qiu D, Li M Y, Xiong R. Electric Field-Induced Coexistence of Nonvolatile Resistive and Magnetization Switching in Pt/NiO/Nb: SrTiO₃ Heterostructure[J]. Appl. Phys. Lett., 2016,109(13):504-510.
14. [14]
  Sangwan V K, Jariwala D, Kim I S, Chen K S, Marks T J, Lauhon L J, Hersam M C. Gate-Tunable Memristive Phenomena Mediated by Grain Boundaries in Single-Layer MoS₂[J]. Nat. Nanotechnol., 2015,10(5):403-406. doi: 10.1038/nnano.2015.56
15. [15]
  Das S, Gulotty R, Sumant A V, Roelofs A. All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor[J]. Nano Lett., 2014,14(5):2861-2866. doi: 10.1021/nl5009037
16. [16]
  Pawbake A S, Waykar R G, Late D J, Jadkar S R. Highly Transparent Wafer Scale Synthesis of Crystalline WS₂ Nanoparticle Thin Film for Photodetector and Humidity Sensing Applications[J]. ACS Appl. Mater. Interfaces, 2016,8(5):3359-3384. doi: 10.1021/acsami.5b11325
17. [17]
  SHAO Y J, SHEN J, GONG S K, CHEN W, ZHOU J. Resistance Switching Effect of CuInS₂ Quantum Dots[J]. Chinese J. Inorg. Chem., 2020,36(11):2093-2099. doi: 10.11862/CJIC.2020.225
18. [18]
  Serag M F, Kaji N, Gaillard C, Okamoto Y, Terasaka K, Jabasini M, Tokeshi M, Mizukami H, Bianco A, Baba Y. Trafficking and Subcellular Localization of Multiwalled Carbon Nanotubes in Plant Cells[J]. ACS Nano, 2011,5(1):493-499. doi: 10.1021/nn102344t
19. [19]
  Zhai Y B, Yang X Q, Wang F, Li Z X, Ding G L, Qiu Z F, Wang Y, Zhou Y, Han S T. Infrared-Sensitive Memory Based on Direct-Grown MoS₂-Upconversion-Nanoparticle Heterostructure[J]. Adv. Mater., 2018,30(49)103563.
20. [20]
  Sun B, Zhao W X, Liu Y H, Chen P. Resistive Switching Effect of Ag/MoS₂/FTO Device[J]. Funct. Mater. Lett., 2015,8(1):50010-50014.
21. [21]
  Choi J Y, Yu H C, Lee J J, Jeon J H, Im J H, Jang J H, Jin S W, Kim K K, Cho S H, Chung C M. Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device[J]. Polymers, 2018,10(8)901. doi: 10.3390/polym10080901
22. [22]
  Bhattacharjee S, Sarkar P K, Prajapat M, Roy A. Electrical Reliability, Multilevel Data Storage and Mechanical Stability of MoS₂-PMMA Nanocomposite-Based Non-Volatile Memory Device[J]. J. Phys. D: Appl. Phys., 2017,51(9):1-8.
23. [23]
  Rehman M M, Rehman H M M U, Gul J Z, Kim W Y, Karimov K S, Ahmed N. Decade of 2D Materials Based RRAM Devices: A Review[J]. Sci. Technol. Adv. Mater., 2020,173:236-327.
24. [24]
  Geng H J, Su Y J, Hao W, Xu M H, Wei L M, Yang Z, Zhang Y F. Controllable Synthesis and Photoelectric Property of Hexagonal SnS₂ Nanoflakes by Triton X-100 Assisted Hydrothermal Method[J]. Mater. Lett., 2013,111(10):204-207.
25. [25]
  Huang Y, Sutter E, Sadowski J T, Cotlet M, Monti O L, Racke D A, Neupane M R, Wickramaratne D, Lake R K, Parkinson B A, Sutter P. Tin Disulfide-An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics[J]. ACS Nano, 2014,8(13):10743-10755.
26. [26]
  Mu J L, Miao H, Liu E Z, Feng J, Teng F, Zhang D K, Kou Y M, Jin Y P, Fan J, Hu X Y. Enhanced Light Trapping and High Charge Transmission Capacities of Novel Structure for Efficient Photoelec-trochemical Water Splitting[J]. Nanoscale, 2018,10:11881-11893. doi: 10.1039/C8NR03040E
27. [27]
  Tu F Z, Xu X, Wang P Z, Si L, Zhou X S, Bao J. A Few-Layer SnS₂/Reduced Graphene Oxide Sandwich Hybrid for Efficient Sodium Storage[J]. J. Phys. Chem. C, 2017,121:3261-3293. doi: 10.1021/acs.jpcc.6b12692
28. [28]
  Liu J Z, Xia C X, Li H L, Pan A L. High On/Off Ratio Photosensitive Field Effect Transistors Based on Few Layer SnS₂[J]. Nanotechnology, 2016,27(34):1-7.
29. [29]
  Smith R J, King P J, Lotya M, Wirtz C, Khan U, De S, O'Neill A, Duesberg G S, Grunlan J C, Moriarty G, Chen J, Wang J Z, Minett A I, Nicolosi V, Coleman J N. Large-Scale Exfoliation of Inorganic Layered Compounds in Aqueous Surfactant Solutions[J]. Adv. Mater., 2011,23:3944-3948. doi: 10.1002/adma.201102584
30. [30]
  Deshpande N G, Sagade A A, Gudage Y G, Lokhande C D, Sharma R J. Growth and Characterization of Tin Disulfide (SnS₂) Thin Film Deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) Technique[J]. J. Alloys Compd., 2017,436(2):421-426.
31. [31]
  Zhang Y C, Zhang F, Yang Z J, Xue H G, Dionysiou D D. Development of a New Efficient Visible-Light-Driven Photocatalyst from SnS₂ and Polyvinyl Chloride[J]. J. Catal., 2016,344:692-700. doi: 10.1016/j.jcat.2016.10.022
32. [32]
  Liu G B, Li Z H, Hasan T, Chen X S, Zheng W, Feng W, Jia D C, Zhou Y, Hu P A. Vertically Aligned Two-Dimensional SnS₂ Nanosheets with a Strong Photon Capturing Capability for Efficient Photoelectrochemical Water Splitting[J]. J. Mater. Chem. A, 2017,5(5):1989-1995. doi: 10.1039/C6TA08327G
33. [33]
  Teng W, Wang Y M, Huang H H, Li X Y, Tang Y B. Enhanced Photoelectrochemical Performance of MoS₂ Nanobelts-Loaded TiO₂ Nanotube Arrays by Photo-Assisted Electrodeposition[J]. Appl. Surf. Sci., 2017,425(17):507-517.
34. [34]
  Takeda N, Parkinson B A. Adsorption Morphology, Light Absorption, and Sensitization Yields for Squaraine Dyes on SnS₂ Surfaces[J]. J. Am. Chem. Soc., 2003,125(18):5559-5571. doi: 10.1021/ja0278483
35. [35]
  Hu X H, Song G S, Li W Y, Peng Y L, Jiang L, Xue Y F, Liu Q, Chen Z G, Hu J Q. Phase-Controlled Synthesis and Photocatalytic Properties of SnS, SnS₂ and SnS/SnS₂ Heterostructure Nanocrystals[J]. Mater. Res. Bull., 2013,48(6):2325-2332. doi: 10.1016/j.materresbull.2013.02.082
36. [36]
  Pradhan S K, Xiao B, Mishra S, Killam A, Pradhan A K. Resistive Switching Behavior of Reduced Graphene Oxide Memory Cells for Low Power Nonvolatile Device Application[J]. Sci. Rep., 2016,6:1-9. doi: 10.1038/s41598-016-0001-8
37. [37]
  Celano U, Goux L, Belmonte A, Opsomer K, Franquet A, Schulze A, Detavernier C, Richard O, Bender H, Jurczak M, Vandervorst W. Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices[J]. Nano Lett., 2014,14(5):2401-2406. doi: 10.1021/nl500049g
38. [38]
  Hou X, Yan X, Liu C S, Ding S J, Zhang D W, Zhou P. Operation Mode Switchable Charge-Trap Memory Based on Few-Layer MoS₂[J]. Semicond. Sci. Technol., 2018,33:4001-4013.
39. [39]
  Yun D Y, Kim T W. Nonvolatile Memory Devices Based on Au/Graphene Oxide Nanocomposites with Bilateral Multilevel Characteristics[J]. Carbon, 2015,88:26-32. doi: 10.1016/j.carbon.2015.02.061
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