Citation: Xu HAN, Bo-wen SUN, Rui-xue XU, Jing XU, Wang HONG, Kai QIAN. Research Progress on Resistance Switching Mechanism of Transparent Memristor Based on Indium Tin Oxide Electrode[J]. Chinese Journal of Inorganic Chemistry, ;2021, 37(4): 577-591. doi: 10.11862/CJIC.2021.081 shu

Research Progress on Resistance Switching Mechanism of Transparent Memristor Based on Indium Tin Oxide Electrode

Xu HAN ¹ ,
Bo-wen SUN ¹ ,
Rui-xue XU ¹ ,
Jing XU ¹ ,
Wang HONG ¹ ,
Kai QIAN ^{1, 2,,}

1.
School of Microelectronics, Shandong University, Jinan 250101, China
2.
Shenzhen Research Institute, Shandong University, Shenzhen, Guangdong 518057, China

Corresponding author: Kai QIAN, kaiqian@sdu.edu.cn
Received Date: 30 September 2020
Revised Date: 28 January 2021

Figures(16)

With the development of electronic technology, functional electronic devices with characteristics such as transparency and flexibility have received widespread attention. As a novel electronic device, the memristor has broad application prospects in the new generation of information technology including low-power neuromorphic computing, non-volatile logic, data storage, etc., and has become a new type of nanodevice that has attracted much attention in recent years. Indium tin oxide, which is an ideal conductive oxide material for transparent memristor preparation due to its excellent optical transparency, is always used in memristor. This review first briefly introduces the structure of memristors, and then reviews the research and application of memristors based on indium tin oxide materials, including their use as memory, electronic synapses, and nociceptor. Then the resistive switching mechanism of indium tin oxide based memristors, especially the newly discovered indium diffusion mechanism in recent years, is summarized. At last, the development prospect of indium tin oxide memristors is summarized and forecasted.
- memristor,
- indium tin oxide,
- resistance switching mechanism,
- indium diffusion,
- transparent device
1. [1]
  Chua L O. IEEE Trans. Circuits Syst. , 1971, 18(5): 507-519
2. [2]
  Strukov D B, Snider G S, Stewart D R, Williams R S. Nature, 2008, 453(7191): 80-83
3. [3]
  Baldi L, Bez R, Sandhu G. Solid State Electron. , 2014, 102: 2-11
4. [4]
  Jeong D S, Thomas R, Katiyar R S, Scott J F, Kohlstedt H, Petraru A, Hwang C S. Rep. Prog. Phys. , 2012, 75(7): 076502
5. [5]
  Zhang Z H, Wang Z W, Shi T, Bi C, Rao F, Cai Y M, Liu Q, Wu H Q, Zhou P. InfoMat, 2020, 2(2): 261-290
6. [6]
  Li Y T, Long S B, Liu Q, Lü H B, Liu S, Liu M. Chin. Sci. Bull. , 2011, 56(28/29): 3072-3078
7. [7]
  ZHANG Y, LONG S B, LIU M. Physics, 2017, 46(10): 645-657
8. [8]
  LONG S B, LIU Q, LÜ H B, LIU M. Sci. Sin. -Phys. Mech. Astron. , 2016, 46(10): 107311
9. [9]
  Yang J J, Strukov D B, Stewart D R. Nat. Nanotechnol. , 2013, 8(1): 13-24
10. [10]
  Pan F, Gao S, Chen C, Song C, Zeng F. Mater. Sci. Eng. R, 2014, 83: 1-59
11. [11]
  Zidan M A, Strachan J P, Lu W D. Nat. Electron. , 2018, 1(1): 22-29
12. [12]
  Chang T C, Chan K C, Tsai T M, Chu T J, Sze S M. Mater. Today, 2016, 19(5): 254-264
13. [13]
  GUO X, TAN Z H, YIN X B, LI H, CHEN L Q, GUO X X. Chin. Sci. Bull. , 2014, 59(30): 2926-2936
14. [14]
  Jeong H, Shi L. J. Phys. D: Appl. Phys. , 2019, 52(2): 023003
15. [15]
  Ravichandran V, Li C, Banagozar A, Yang J J, Xia Q F. Sci. China Inf. Sci. , 2018, 61(6): 060423
16. [16]
  Zhang Y, Wang Z R, Zhu J D, Yang Y C, Rao M Y, Song W H, Zhuo Y, Zhang X M, Cui M L, Shen L L, Huang R, Yang J J. Appl. Phys. Rev. , 2020, 7(1): 011308
17. [17]
  Zhu J D, Zhang T, Yang Y C, Huang R. Appl. Phys. Rev. , 2020, 7(1): 011312
18. [18]
  ZHANG C X, CHEN Y, YI M D, ZHU Y, LI T F, LIU L T, WANG L Y, XIE L H, HUANG W. Sci. Sin. Inform. , 2018, 48(2): 115-142
19. [19]
  Yao P, Wu H, Gao B, Tang J, Zhang Q, Zhang W, Yang J J, Qian H. Nature, 2020, 577(7792): 641-646
20. [20]
  Cheng L, Li Y, Yin K S, Hu S Y, Su Y T, Jin M M, Wang Z, Chang T C, Miao X S. Adv. Funct. Mater. , 2019, 29(49): 1905660
21. [21]
  WANG Y H, LIU C, HUANG R, YANG Y C. Chin. Sci. Bull. , 2019, 65(10): 904-915
22. [22]
  Cha J H, Yang S Y, Oh J, Choi S, Park S, Jang B C, Ahn W, Choi S Y. Nanoscale, 2020, 12(27): 14339-14368
23. [23]
  Xia Q F, Yang J J. Nat. Mater. , 2019, 18(4): 309-323
24. [24]
  Wang Z R, Wu H Q, Burr G W, Hwang C S, Wang K L, Xia Q F, Yang J J. Nat. Rev. Mater. , 2020, 5(3): 173-195
25. [25]
  Huh W, Lee D, Lee C H. Adv. Mater. , 2020, 32(51): 2002092
26. [26]
  Qian K, Nguyen V C, Chen T, Lee P S. Adv. Electron. Mater. , 2016, 2(4): 1500370
27. [27]
  Zhao X N, Xu H Y, Wang Z Q, Lin Y, Liu Y C. InfoMat, 2019, 1: 183-210
28. [28]
  SHAO Y J, SHEN J, GONG S K, CHEN W, ZHOU J. Chinese J. Inorg. Chem. , 2020, 36(11): 2093-2099
29. [29]
  WU X F, YUAN L, HUANG K K, FENG S H. Chinese J. Inorg. Chem. , 2015, 31(9): 1726-1738
30. [30]
  Zhao Q L, Xie Z J, Peng Y P, Wang K Y, Wang H D, Li X N, Wang H W, Chen J S, Zhang H, Yan X B. Mater. Horiz. , 2020, 7(6): 1495-1518
31. [31]
  LIU Y C, LIN Y, WANG Z Q, XU H Y. Acta Phys. Sin. , 2019, 68(16): 168504
32. [32]
  Choi B J, Torrezan A C, Strachan J P, Kotula P G, Lohn A J, Marinella M J, Li Z Y, Williams R S, Yang J J. Adv. Funct. Mater. , 2016, 26(29): 5290-5296
33. [33]
  Zhu L G, Zhou J, Guo Z L, Sun Z M. J. Materiomics, 2015, 1(4): 285-295
34. [34]
  Gao S, Yi X, Shang J, Liu G, Li R W. Chem. Soc. Rev. , 2019, 48(6): 1531-1565
35. [35]
  Raeis H N, Lee J S. J. Electroceram. , 2017, 39(1/2/3/4): 223-238
36. [36]
  Wang C Y, Wang C, Meng F H, Wang P F, Wang S, Liang S J, Miao F. Adv. Electron. Mater. , 2019, 6(2): 1901107
37. [37]
  Xiao X Y, Hu J, Tang S, Yan K, Gao B, Chen H L, Zou D C. Adv. Mater. Technol. , 2020, 5(6): 1900914
38. [38]
  Chen Q Y, Lin M, Wang Z W, Zhao X L, Cai Y M, Liu Q, Fang Y C, Yang Y C, He M, Huang R. Adv. Electron. Mater. , 2019, 5(9): 1800852
39. [39]
  Zhou Y, Liu D N, Wang J H, Cheng Z Q, Liu L, Yang N, Liu Y X, Xia T, Liu X Y, Zhang X, Ye C, Xu Z, Xiong W, Chu P K, Yu X F. ACS Appl. Mater. Interfaces, 2020, 12(22): 25108-25114
40. [40]
  Yan X B, Wang K Y, Zhao J H, Zhou Z Y, Wang H, Wang J J, Zhang L, Li X Y, Xiao Z A, Zhao Q L, Pei Y F, Wang G, Qin C Y, Li H, Lou J Z, Liu Q, Zhou P. Small, 2019, 15(25): 1900107
41. [41]
  Shi Y Y, Liang X H, Yuan B, Chen V, Li H T, Hui F, Yu Z, Yuan F, Pop E, Wong H S P, Lanza M. Nat. Electron. , 2018, 1(8): 458-465
42. [42]
  Qian K, Nguyen V C, Chen T, Lee P S. J. Mater. Chem. C, 2016, 4(41): 9637-9645
43. [43]
  CHEN X P, HU S M, HU H L, YUE J L, KUANG Z J, HUANG X Z. Chinese J. Inorg. Chem. , 2020, 36(12): 2281-2288
44. [44]
  Wang C F, Wang C H, Huang Z L, Xu S. Adv. Mater. , 2018, 30(50): e1801368
45. [45]
  Aydın E B, Sezgintürk M K. TrAC Trends Anal. Chem. , 2017, 97: 309-315
46. [46]
  Granqvist C G, Hultaker A. Thin Solid Films, 2002, 411(1): 1-5
47. [47]
  Wang D T, Dai Y W, Xu J, Chen L, Sun Q Q, Zhou P, Wang P F, Ding S J, Zhang D W. IEEE Electron Device Lett. , 2016, 37(7): 878-881
48. [48]
  Ge J, Zhang S, Liu Z Y, Xie Z K, Pan S S. Nanoscale, 2019, 11(14): 6591-6601
49. [49]
  Raeis H N, Park Y, Lee J S. Adv. Funct. Mater. , 2018, 28(31): 1800553
50. [50]
  Xiong W, Zhu L Q, Ye C, Ren Z Y, Yu F, Xiao H, Xu Z, Zhou Y, Zhou H, Lu H L. Adv. Electron. Mater. , 2020, 6(5): 1901402
51. [51]
  Siddik A, Haldar P K, Garu P, Bhattacharjee S, Das U, Barman A, Roy A, Sarkar P K. J. Phys. D: Appl. Phys. , 2020, 53(29): 295103
52. [52]
  Ren S X, Li Z H, Tang L Z, Su X, Zhang H, Zhang G L, Zhang H, Cao G Z, Zhao J J. Adv. Electron. Mater. , 2020, 6(5): 2000151
53. [53]
  Shang J, Xue W, Ji Z, Liu G, Niu X, Yi X, Pan L, Zhan Q, Xu X H, Li R W. Nanoscale, 2017, 9(21): 7037-7046
54. [54]
  Qian K, Tay R Y, Nguyen V C, Wang J X, Cai G F, Chen T P, Teo E H T, Lee P S. Adv. Funct. Mater. , 2016, 26(13): 2176-2184
55. [55]
  Kim J H, Seong T Y, Ahn K J, Chung K B, Seok H J, Seo H J, Kim H K. Appl. Surf. Sci. , 2018, 440: 1211-1218
56. [56]
  Cui H N, Teixeira V, Monteiro A. Vacuum, 2002, 67(3/4): 589-594
57. [57]
  Boehme M, Charton C. Surf. Coat. Technol. , 2005, 200(1/2/3/4): 932-935
58. [58]
  Jung T, Kim S, Song P. Surf. Coat. Technol. , 2010, 205: S318-S323
59. [59]
  George J, Menon C S. Surf. Coat. Technol. , 2000, 132(1): 45-48
60. [60]
  Hamberg I, Granqvist C G. J. Appl. Phys. , 1986, 60(11): R123-R160
61. [61]
  Sawada Y, Kobayashi C, Seki S, Funakubo H. Thin Solid Films, 2002, 409(1): 46-50
62. [62]
  Hong S J, Han J I. Curr. Appl. Phys. , 2006, 6: e206-e210
63. [63]
  JIANG Z R. Development and Application of Materials, 2010, 25(4): 68-71
64. [64]
  QIU Y, CHEN Y F, ZU C K, JIN Y L. Advanced Ceramics, 2016, 37(5): 303-324
65. [65]
  LI X H, SONG K Q, CONG D L, ZHANG M, SUN C Y, WU H L, LI Z S. Surf. Technol. , 2020, 49(7): 126-132
66. [66]
  ZHANG S G, HUANG B Y, FANG X H. Mater. Rep. , 1997, 11(4): 11-14
67. [67]
  MA Y, KONG C Y. Journal of Chongqing University (Natural Science Edition), 2002, 25(8): 114-117
68. [68]
  CHENG L S, SUN B S, ZHONG J M, HE L J, WANG D X, CHEN H M. Rare Met. Lett. , 2008, 27(3): 10-16
69. [69]
  Kim H, Gilmore C M, Piqué A, Horwitz J S, Mattoussi H, Murata H, Kafafi Z H, Chrisey D B. J. Appl. Phys. , 1999, 86(11): 6451-6461
70. [70]
  Yang S M, Sun B S, Liu Y, Zhu J P, Song J X, Hao Z H, Zeng X Y, Zhao X, Shu Y C, Chen J, Yi Ji H, He J L. Ceram. Int. , 2020, 46(5): 6342-6350
71. [71]
  Thirumoorthi M, Thomas J P J. J. Asian Ceram. Soc. , 2018, 4(1): 124-132
72. [72]
  Wang Y, Zhu L J, Hu Y F, Deng Z B, Lou Z D, Hou Y B, Teng F. Opt. Express, 2017, 25(7): 7719-7729
73. [73]
  Abbas S, Kumar M, Kim J. Mater. Sci. Semicond. Process. , 2018, 88: 86-92
74. [74]
  Aleksandrova M, Kurtev N, Videkov V, Tzanova S, Schintke S. Microelectron. Eng. , 2015, 145: 112-116
75. [75]
  Zhang D, Tavakoliyaraki A, Wu Y, Swaaij R A C M M, Zeman M. Energy Procedia, 2011, 8: 207-213
76. [76]
  Kim S S, Yoon Y C, Kim K H. J. Electroceram. , 2003, 10(2): 95-101
77. [77]
  Won S J, Park J W, Lim K S, Kang S J, Hong Y H, Yang J H, Fang L, Sung G Y, Kim H K. Appl. Phys. Lett. , 2009, 95(13): 133508
78. [78]
  Kavehei O, Cho K, Lee S, Kim S, Alsarawi S F, Abbott D, Eshraghian K. 54th International Midwest Symposium on Circuits and Systems (MWSCAS). Seoul: IEEE, 2011: 1-4
79. [79]
  SUN B W, QIAN K, WANG Q P. Micro/nano Electronics and Intelligent Manufacturing, 2019, 1(4): 76-86
80. [80]
  Xue W H, Li Y, Liu G, Wang Z R, Xiao W, Jiang K M, Zhong Z C, Gao S, Ding J, Miao X S, Xu X H, Li R W. Adv. Electron. Mater. , 2019, 6(2): 1901055
81. [81]
  Yan X B, Li X Y, Zhou Z Y, Zhao J H, Wang H, Wang J J, Zhang L, Ren D L, Zhang X, Chen J S, Lu C, Zhou P, Liu Q. ACS Appl. Mater. Interfaces, 2019, 11(20): 18654-18661
82. [82]
  Zeng F J, Guo Y Y, Hu W, Tan Y Q, Zhang X M, Feng J L, Tang X S. ACS Appl. Mater. Interfaces, 2020, 12(20): 23094-23101
83. [83]
  Jaafar A H, Gray R J, Verrelli E, O'Neill M, Kelly S M, Kemp N T. Nanoscale, 2017, 9(43): 17091-17098
84. [84]
  Gao S, Liu G, Yang H L, Hu C, Chen Q L, Gong G D, Xue W H, Yi X H, Shang J, Li R W. ACS Nano, 2019, 13(2): 2634-2642
85. [85]
  Tan H W, Liu G, Yang H L, Yi X H, Pan L, Shang J, Long S B, Liu M, Wu Y H, Li R W. ACS Nano, 2017, 11(11): 11298-11305
86. [86]
  Huang W, Hang P J, Wang Y, Wang K, Han S H, Chen Z R, Peng W B, Zhu Y Y, Xu M S, Zhang Y Q, Fang Y J, Yu X G, Yang D R, Pi X D. Nano Energy, 2020, 73: 104790
87. [87]
  Xue W H, Ci W J, Xu X H, Liu G. Chin. Phys. B, 2020, 29(4): 048401
88. [88]
  ZHANG J Q, WU X F, MA X Y, YUAN L, HUANG K K, FENG S H. Chinese J. Inorg. Chem. , 2018, 34(4): 784-790
89. [89]
  Shang J, Liu G, Yang H L, Zhu X J, Chen X X, Tan H W, Hu B L, Pan L, Xue W H, Li R W. Adv. Funct. Mater. , 2014, 24(15): 2171-2179
90. [90]
  Qian K, Tay R Y, Lin M F, Chen J, Li H, Lin J, Wang J, Cai G, Nguyen V C, Teo E H, Chen T, Lee P S. ACS Nano, 2017, 11(2): 1712-1718
91. [91]
  Qian K, Cai G, Nguyen V C, Chen T, Lee P S. ACS Appl. Mater. Interfaces, 2016, 8(41): 27885-27891
92. [92]
  Qian K, Han X, Li H, Chen T, Lee P S. ACS Appl. Mater. Interfaces, 2020, 12(4): 4579-4585
93. [93]
  Sun B W, Han X, Xu R X, Qian K. ACS Appl. Electron. Mater. , 2020, 2(6): 1603-1608
94. [94]
  Huang J S, Lin Y C, Tsai H W, Yen W C, Chen C W, Lee C Y, Chin T S, Chueh Y L. Adv. Electron. Mater. , 2015, 1(8): 1500061
95. [95]
  Wang Y C, Hu L X, Wei X H, Zhuge F. Appl. Phys. Lett. , 2020, 116(22): 221602
96. [96]
  Chen P H, Yang H Y, Su Y T, Tsou C M. J. Micromech. Microeng. , 2020, 30(4): 045003
97. [97]
  Sawa A. Mater. Today, 2008, 11(6): 28-36
98. [98]
  Waser R, Dittmann R, Staikov G, Szot K. Adv. Mater. , 2009, 21(25/26): 2632-2663
99. [99]
  Zhou Z Y, Zhao J H, Chen A P, Pei Y F, Xiao Z A, Wang G, Chen J S, Fu G S, Yan X B. Mater. Horiz. , 2020, 7(4): 1106-1114
100. [100]
  Pei Y, Zhou Z, Chen A P, Chen J, Yan X. Nanoscale, 2020, 12(25): 13531-13539
101. [101]
  Matsukatova A N, Emelyanov A V, Minnekhanov A A, Sakharutov D A, Vdovichenko A Y, Kamyshinskii R A, Demin V A, Rylkov V V, Forsh P A, Chvalun S N, Kashkarov P K. Tech. Phys. Lett. , 2020, 46(1): 73-76
102. [102]
  Liu D Q, Cheng H F, Wang G, Zhu X, Shao Z Z, Wang N N, Zhang C Y. IEEE Electron Device Lett. , 2013, 34(12): 1506-1508
103. [103]
  Lee S H, Park H L, Kim M H, Kang S, Lee S D. ACS Appl. Mater. Interfaces, 2019, 11(33): 30108-30115
104. [104]
  Zaheer M, Cai Y C, Waqas A B, Abbasi S F, Zhu G D, Cong C X, Qiu Z J, Liu R, Qin Y J, Zheng L R, Hu L G. Phys. Status Solidi RRL, 2020, 14(5): 2000050
105. [105]
  Kamarozaman N S, Aznilinda Z, Herman S H, Bakar R A, Rusop M. 10th IEEE International Conference on Semiconductor Electronics. Kuala Lumpur: IEEE, 2012: 703-706
106. [106]
  Wu S X, Ren L Z, Qing J, Yu F M, Yang K G, Yang M, Wang Y J, Meng M, Zhou W Q, Zhou X, Li S W. ACS Appl. Mater. Interfaces, 2014, 6(11): 8575-8579
107. [107]
  Xue Q, Wang Y C, Wei X H. Appl. Surf. Sci. , 2019, 479: 469-474
108. [108]
  Liu C Y, Shih Y R, Huang S J. Solid State Commun. , 2013, 159: 13-17
109. [109]
  Mehonic A, Cueff S, Wojdak M, Hudziak S, Labbe C, Rizk R, Kenyon A. J. Nanotechnol. , 2012, 23(45): 455201
110. [110]
  Tan Z H, Yang R, Terabe K, Yin X B, Zhang X D, Guo X. Adv. Mater. , 2016, 28(2): 377-384
111. [111]
  Chen P H, Chang K C, Chang T C, Tsai T M, Pan C H, Chu T J, Chen M C, Huang H C, Lo I, Zheng J C, Sze S M. IEEE Electron Device Lett. , 2016, 37(3): 280-283
112. [112]
  Chiang K K, Chen J S, Wu J J. ACS Appl. Mater. Interfaces, 2012, 4(8): 4237-45
113. [113]
  Lin C Y, Chang K C, Chang T C, Tsai T M, Pan C H, Zhang R, Liu K H, Chen H M, Tseng Y T, Hung Y C, Syu Y E, Zheng J C, Wang Y L, Zhang W, Sze S M. IEEE Electron Device Lett. , 2015, 36(6): 564-566
114. [114]
  Pan C H, Chang T C, Tsai T, Chang K C, Chu T J, Shih C C, Lin C Y, Chen P H, Wu H Q, Deng N, Qian H, Sze S M. IEEE Trans. Electron Devices, 2016, 63(12): 4737-4743
115. [115]
  Zhao Y Y, Sun W J, Wang J, He J H, Li H, Xu Q F, Li N J, Chen D Y, Lu J M. Adv. Funct. Mater. , 2020, 30(39): 2004245
116. [116]
  Zhou L, Yang S W, Ding G Q, Yang J Q, Ren Y, Zhang S R, Mao J Y, Yang Y C, Zhou Y, Han S T. Nano Energy, 2019, 58: 293-303
117. [117]
  Goswami S, Rath S P, Thompson D, Hedstrom S, Annamalai M, Pramanick R, Ilic B R, Sarkar S, Hooda S, Nijhuis C A, Martin J, Williams R S, Goswami S, Venkatesan T. Nat. Nanotechnol. , 2020, 15(5): 380-389
118. [118]
  Lubben M, Karakolis P, Ioannou S V, Normand P, Dimitrakis P, Valov I. Adv. Mater. , 2015, 27(40): 6202-6207
119. [119]
  Lanza M, Wong H S P, Pop E, Ielmini D, Strukov D, Regan B C, Larcher L, Villena M A, Yang J J, Goux L, Belmonte A, Yang Y C, Puglisi F M, Kang J F, Magyari Kope B, Yalon E, Kenyon A, Buckwell M, Mehonic A, Shluger A, Li H T, Hou T H, Hudec B, Akinwande D, Ge R J, Ambrogio S, Roldan J B, Miranda E, Sune J, Pey K L, Wu X, Raghavan N, Wu E, Lu W D, Navarro G, Zhang W D, Wu H Q, Li R W, Holleitner A, Wurstbauer U, Lemme M C, Liu M, Long S B, Liu Q, Lv H B, Padovani A, Pavan P, Valov I, Jing X, Han T T, Zhu K C, Chen S C, Hui F, Shi Y Y. Adv. Electron. Mater. , 2019, 5(1): 1800143
120. [120]
  de Jong M P, Simons D P L, Reijme M A, van Ijzendoorn L J, van der Gon A W D, de Voigt M J A, Brongersma H H, Gymer R W. Synth. Met. , 2000, 110(1): 1-6
121. [121]
  Lee S T, Gao Z Q, Hung L S. Appl. Phys. Lett. , 1999, 75(10): 1404-1406
122. [122]
  Gallardo D E, Bertoni C, Dunn S, Gaponik N, Eychmüller A. Adv. Mater. , 2007, 19(20): 3364-3367
123. [123]
  Wu X J, Xu H H, Wang Y, Rogach A L, Shen Y Z, Zhao N. Semicond. Sci. Technol. , 2015, 30(7): 074002
124. [124]
  Busby Y, Crespo M N, Girleanu M, Brinkmann M, Ersen O, Pireaux J J. Org. Electron. , 2015, 16: 40-45
125. [125]
  Yang Y C, Huang R. Nat. Electron. , 2018, 1(5): 274-287
126. [126]
  Yang Y, Gao P, Li L, Pan X, Tappertzhofen S, Choi S, Waser R, Valov I, Lu W D. Nat. Commun. , 2014, 5: 4232
127. [127]
  Kumar D, Aluguri R, Chand U, Tseng T Y. Nanotechnol. , 2018, 29(12): 125202
128. [128]
  Chen Y S, Lee H Y, Chen P S, Wu T Y, Wang C C, Tzeng P J, Chen F, Tsai M J, Lien C. IEEE Electron Device Lett. , 2010, 31(12): 1473-1475
1. [1]
  Jing SU , Bingrong LI , Yiyan BAI , Wenjuan JI , Haiying YANG , Zhefeng Fan . Highly sensitive electrochemical dopamine sensor based on a highly stable In-based metal-organic framework with amino-enriched pores. Chinese Journal of Inorganic Chemistry, 2024, 40(7): 1337-1346. doi: 10.11862/CJIC.20230414
2. [2]
  Huan LI , Shengyan WANG , Long Zhang , Yue CAO , Xiaohan YANG , Ziliang WANG , Wenjuan ZHU , Wenlei ZHU , Yang ZHOU . Growth mechanisms and application potentials of magic-size clusters of groups Ⅱ-Ⅵ semiconductors. Chinese Journal of Inorganic Chemistry, 2024, 40(8): 1425-1441. doi: 10.11862/CJIC.20240088
3. [3]
  Jingjing QING , Fan HE , Zhihui LIU , Shuaipeng HOU , Ya LIU , Yifan JIANG , Mengting TAN , Lifang HE , Fuxing ZHANG , Xiaoming ZHU . Synthesis, structure, and anticancer activity of two complexes of dimethylglyoxime organotin. Chinese Journal of Inorganic Chemistry, 2024, 40(7): 1301-1308. doi: 10.11862/CJIC.20240003
4. [4]
  Chuanming GUO , Kaiyang ZHANG , Yun WU , Rui YAO , Qiang ZHAO , Jinping LI , Guang LIU . Performance of MnO₂-0.39IrO_x composite oxides for water oxidation reaction in acidic media. Chinese Journal of Inorganic Chemistry, 2024, 40(6): 1135-1142. doi: 10.11862/CJIC.20230459
5. [5]
  Zhihuan XU , Qing KANG , Yuzhen LONG , Qian YUAN , Cidong LIU , Xin LI , Genghuai TANG , Yuqing LIAO . Effect of graphene oxide concentration on the electrochemical properties of reduced graphene oxide/ZnS. Chinese Journal of Inorganic Chemistry, 2024, 40(7): 1329-1336. doi: 10.11862/CJIC.20230447
6. [6]
  Kai CHEN , Fengshun WU , Shun XIAO , Jinbao ZHANG , Lihua ZHU . PtRu/nitrogen-doped carbon for electrocatalytic methanol oxidation and hydrogen evolution by water electrolysis. Chinese Journal of Inorganic Chemistry, 2024, 40(7): 1357-1367. doi: 10.11862/CJIC.20230350
7. [7]
  Zhuo WANG , Junshan ZHANG , Shaoyan YANG , Lingyan ZHOU , Yedi LI , Yuanpei LAN . Preparation and photocatalytic performance of CeO₂-reduced graphene oxide by thermal decomposition. Chinese Journal of Inorganic Chemistry, 2024, 40(9): 1708-1718. doi: 10.11862/CJIC.20240067
8. [8]
  Zhanggui DUAN , Yi PEI , Shanshan ZHENG , Zhaoyang WANG , Yongguang WANG , Junjie WANG , Yang HU , Chunxin LÜ , Wei ZHONG . Preparation of UiO-66-NH₂ supported copper catalyst and its catalytic activity on alcohol oxidation. Chinese Journal of Inorganic Chemistry, 2024, 40(3): 496-506. doi: 10.11862/CJIC.20230317
9. [9]
  Bo YANG , Gongxuan LÜ , Jiantai MA . Nickel phosphide modified phosphorus doped gallium oxide for visible light photocatalytic water splitting to hydrogen. Chinese Journal of Inorganic Chemistry, 2024, 40(4): 736-750. doi: 10.11862/CJIC.20230346
10. [10]
  Zeyu XU , Anlei DANG , Bihua DENG , Xiaoxin ZUO , Yu LU , Ping YANG , Wenzhu YIN . Evaluation of the efficacy of graphene oxide quantum dots as an ovalbumin delivery platform and adjuvant for immune enhancement. Chinese Journal of Inorganic Chemistry, 2024, 40(6): 1065-1078. doi: 10.11862/CJIC.20240099
11. [11]
  Siyu HOU , Weiyao LI , Jiadong LIU , Fei WANG , Wensi LIU , Jing YANG , Ying ZHANG . Preparation and catalytic performance of magnetic nano iron oxide by oxidation co-precipitation method. Chinese Journal of Inorganic Chemistry, 2024, 40(8): 1577-1582. doi: 10.11862/CJIC.20230469
12. [12]
  Chunmei GUO , Weihan YIN , Jingyi SHI , Jianhang ZHAO , Ying CHEN , Quli FAN . Facile construction and peroxidase-like activity of single-atom platinum nanozyme. Chinese Journal of Inorganic Chemistry, 2024, 40(9): 1633-1639. doi: 10.11862/CJIC.20240162
13. [13]
  Xiaoning TANG , Shu XIA , Jie LEI , Xingfu YANG , Qiuyang LUO , Junnan LIU , An XUE . Fluorine-doped MnO₂ with oxygen vacancy for stabilizing Zn-ion batteries. Chinese Journal of Inorganic Chemistry, 2024, 40(9): 1671-1678. doi: 10.11862/CJIC.20240149
14. [14]
  Endong YANG , Haoze TIAN , Ke ZHANG , Yongbing LOU . Efficient oxygen evolution reaction of CuCo₂O₄/NiFe-layered bimetallic hydroxide core-shell nanoflower sphere arrays. Chinese Journal of Inorganic Chemistry, 2024, 40(5): 930-940. doi: 10.11862/CJIC.20230369
15. [15]
  Yan LIU , Jiaxin GUO , Song YANG , Shixian XU , Yanyan YANG , Zhongliang YU , Xiaogang HAO . Exclusionary recovery of phosphate anions with low concentration from wastewater using a CoNi-layered double hydroxide/graphene electronically controlled separation film. Chinese Journal of Inorganic Chemistry, 2024, 40(9): 1775-1783. doi: 10.11862/CJIC.20240043

Get Citation

PDF

XML

Metrics

PDF Downloads(70)
Abstract views(2447)
HTML views(849)

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142