Citation: CHEN Xiao-Ping, HU Si-Min, HU Hai-Long, YUE Jian-Ling, KUANG Zhen-Jie, HUANG Xiao-Zhong. Preparation of TiO₂@C_f Flexible Memristor Crossbars via Sol-Gel Method[J]. Chinese Journal of Inorganic Chemistry, ;2020, 36(12): 2281-2288. doi: 10.11862/CJIC.2020.246 shu

Preparation of TiO₂@C_f Flexible Memristor Crossbars via Sol-Gel Method

CHEN Xiao-Ping ^1,2 ,
HU Si-Min ^1,2 ,
HU Hai-Long ^1,3 ,
YUE Jian-Ling ^1,2,, ,
KUANG Zhen-Jie ^1,2 ,
HUANG Xiao-Zhong ^1,2

1.
School of Aeronautics and Astronautics, Central South University, Changsha 410083, China
2.
Hunan Key Laboratory of Advanced Fibers and Composites, Changsha 410083, China
3.
Research Center in Intelligent Thermal Structures for Aerospace, Changsha 410083, China

Corresponding author: YUE Jian-Ling, jlyue2010@csu.deu.cn
Received Date: 20 May 2020
Revised Date: 18 September 2020

Figures(9)

Carbon fiber was used as the flexible substrate and electrode material, and the TiO₂ resistive active layer was plated by the sol-gel method, and then the flexible fiber memristor (TiO₂@C_f) was prepared by the"ten"overlapping. The structure was characterized by X-ray diffraction, scanning electron microscope and X-ray photoelectron spectroscopy and memristance characteristic and resistance change mechanism were studied. The results show that the TiO₂ coating on the carbon fiber has an anatase crystal structure, and the concentration of oxygen vacancies was about 19.5%. The prepared TiO₂@C_f flexible memristor was a mutant memristor and it has a high-low resistance state switch ratio up to 10⁴. When performing the fatigue resistance test, the high-low resistance state switch ratio of the memristive device is stable at about two orders of magnitude. For both high resistance state and low resistance state, the carrier transport mechanism is dominated by ohmic conduction, where the resistance state transition is related to the formation and breakage of oxygen vacant conductive filaments. This memristor can sustain flexible bending deformation to a certain extent, either knitting or wearing.
- sol-gel processes,
- crystal growth,
- carbon fibers,
- memristor crossbars,
- oxygen vacancies,
- flexible devices
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沈阳化工大学材料科学与工程学院沈阳 110142

Preparation of TiO2@Cf Flexible Memristor Crossbars via Sol-Gel Method

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通讯作者: 陈斌, bchen63@163.com

Preparation of TiO₂@C_f Flexible Memristor Crossbars via Sol-Gel Method