Citation: ZHANG Jia-Qi, WU Xiao-Feng, MA Xin-Yu, YUAN Long, HUANG Ke-Ke, FENG Shou-Hua. Amporphous La_0.75Sr_0.25MnO₃ Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory[J]. Chinese Journal of Inorganic Chemistry, ;2018, 34(4): 784-790. doi: 10.11862/CJIC.2018.099 shu

Amporphous La_0.75Sr_0.25MnO₃ Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory

State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China

Corresponding author: FENG Shou-Hua, shfeng@jlu.edu.cn
Received Date: 21 November 2017
Revised Date: 28 December 2017

Figures(6)

Amorphous La_0.75Sr_0.25MnO₃(a-LSMO) was deposited by pulsed laser deposition (PLD) as an interlayer of a resistive-switching device (Ag/a-LSMO/ITO) with good non-volatile and bipolar resistance switching behaviour.Bottom ITO substrate and ultra-thin a-LSMO layer allow semi-transparent device fabrication.The formation of Ag filament connected from Ag electrode to ITO electrode is directly observed in the cross-sectional image by the high-resolution transmission electron microscope (HRTEM).The resistive switching in the device is attributed to the growth and dissolution of Ag filament in the amorphous LSMO layer.
- resistive random access memory,
- manganite,
- pulsed laser deposition,
- perovskite
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沈阳化工大学材料科学与工程学院沈阳 110142

Amporphous La0.75Sr0.25MnO3 Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory

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通讯作者: 陈斌, bchen63@163.com

Amporphous La_0.75Sr_0.25MnO₃ Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory