Citation: HOU Jing-Jing, ZHAO Qing-Hua, LI Ting-Yu, HU Jie, LI Peng-Wei, LI Gang. Spherical MoS₂/WO₃ Composite Semiconductor:Preparation and Photocatalytic Performance for RhB[J]. Chinese Journal of Inorganic Chemistry, ;2017, 33(9): 1527-1536. doi: 10.11862/CJIC.2017.211 shu

Spherical MoS₂/WO₃ Composite Semiconductor:Preparation and Photocatalytic Performance for RhB

MicroNano System Research Center, College of Information Engineering & Key Lab of Advanced Transducers and Intelligent Control System(Ministry of Education), Taiyuan University of Technology, Taiyuan 030024, China

Corresponding author: ZHAO Qing-Hua, zhaoqinghua218@163.com LI Gang, ligang4122001@gmail.com
Received Date: 25 April 2017
Revised Date: 3 August 2017

Figures(10)

MoS₂/WO₃ composite photocatalyst was synthesized by a hydrothermal method. The morphology and structure of samples were respectively characterized by SEM, TEM, XRD, Raman, BET and DRS. Compared with pure WO₃ and flaky MoS₂/WO₃, the results show that spherical MoS₂/WO₃ photocatalysts possess higher photocatalytic efficiency for RhB. For the spherical MoS₂/WO₃ composite semiconductor, the effect of MoS₂ loading content (0.5%, 1%, 2%, 5%, 10%) on the photocatalytic degradation of RhB was investigated. The results show that the catalytic effect is the best when the content of MoS₂ is 2%. At the same time, the effect of pH (pH=1, 3, 7, 11) on the photocatalytic activity was studied. The results show that the degradation rate is the highest at pH=6. When the amount of catalyst is 1 g·L^-1, the degradation rate of RhB reaches 96.6% after 30 min. The transient photocurrent of spherical MoS₂/WO₃ is 0.050 6 mA·cm^-2, which is increased by a factor of 2.4 compared with that of WO₃. After five cycles of stability test, the spherical MoS₂/WO₃ composite semiconductor catalyst can maintain a high degradation rate of 90%.
- MoS₂/WO₃,
- heterojunction,
- photocatalysis,
- degradation,
- RhB
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Spherical MoS₂/WO₃ Composite Semiconductor:Preparation and Photocatalytic Performance for RhB