Sensitive and Accurate Measurement of Interstitial Oxygen and Substitutional Carbon in Single Crystalline Silicon by Multiple Transmission-Reflection Infrared Spectroscopy (MTR-IR)
- Corresponding author: XIAO Shou-Jun, sjxiao@nju.edu.cn
Citation: LU Xiao-Bin, XIAO Shou-Jun. Sensitive and Accurate Measurement of Interstitial Oxygen and Substitutional Carbon in Single Crystalline Silicon by Multiple Transmission-Reflection Infrared Spectroscopy (MTR-IR)[J]. Chinese Journal of Inorganic Chemistry, ;2016, 32(2): 351-359. doi: 10.11862/CJIC.2016.044
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The incident light, depicted with arrows, transmits the silicon chip N times and reflects on two gold mirrors N times too, finally reaches the detector. The parameters used in the calculation are marked: b, the thickness of the chip; θ, the Brewster incidence angle of 74°; bB, the optical path at the Brewster incidence[27-28].
Length of the sample is 50 mm, n=3.42, N=10, b=0.045 cm, θ=74°. "MTR-sample" denotes the spectrum of a sample measured with the MTR-IR method; "IR-sample" indicates the spectrum of the same sample measured with the conventional IR method
cOi=3.14×1017×εOi (cm-3)[21]
cCs=8.2×1016×εCs (cm-3)[22]
With assignment of n=3.42, ε=39.5 cm2, b=0.02 cm, bB=0.020 8 cm, bMTR=0.166 4 cm, θ=74°, N=8
With a sample length of 5 cm, n=3.42, N=8, b=0.02 cm, bB=0.020 8 cm, bMTR=0.166 4 cm, θ=74°
(a) With the length of a silicon slice 50 mm, n=3.42, b=0.045 cm, θ=74°