Citation: WU Xiao-Feng, YUAN Long, HUANG Ke-Ke, FENG Shou-Hua. Memristive Effects in Inorganic Solid Materials[J]. Chinese Journal of Inorganic Chemistry, ;2015, 31(9): 1726-1738. doi: 10.11862/CJIC.2015.254
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Crystal defects are fundamental issues that define the physical and chemical properties in inorganic solid state chemistry. Memristive effects, which are mainly controlled by defects migration in solid state, will bring new revolution to the future electronic information industry. In this review, recent progress of memrisive effect in inorganic solid state materials was summarized. Main mechanism and material types are discussed in detail. These phenomena are highly related to atomic-scale p-n junction in manganite. This review indicates that defect transport mechanism study in electric field is an very important aspects in memristive applications.
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