引用本文:
Wenli Xu, Yingzhao Zhang, Rui Wang, Chenyang Liu, Jialin Liu, Xiangyu Huo, Xinying Liu, He Zhang, Jianxu Ding. In-situ passivating surface defects of ultra-thin MAPbBr3 perovskite single crystal films for high performance photodetectors[J]. Chinese Journal of Structural Chemistry,
2025, 44(1): 100454.
doi:
10.1016/j.cjsc.2024.100454
Citation: Wenli Xu, Yingzhao Zhang, Rui Wang, Chenyang Liu, Jialin Liu, Xiangyu Huo, Xinying Liu, He Zhang, Jianxu Ding. In-situ passivating surface defects of ultra-thin MAPbBr3 perovskite single crystal films for high performance photodetectors[J]. Chinese Journal of Structural Chemistry, 2025, 44(1): 100454. doi: 10.1016/j.cjsc.2024.100454
Citation: Wenli Xu, Yingzhao Zhang, Rui Wang, Chenyang Liu, Jialin Liu, Xiangyu Huo, Xinying Liu, He Zhang, Jianxu Ding. In-situ passivating surface defects of ultra-thin MAPbBr3 perovskite single crystal films for high performance photodetectors[J]. Chinese Journal of Structural Chemistry, 2025, 44(1): 100454. doi: 10.1016/j.cjsc.2024.100454
In-situ passivating surface defects of ultra-thin MAPbBr3 perovskite single crystal films for high performance photodetectors
摘要:
Ultra-thin single crystal film (SCF) without grain boundary, inherits low charge recombination probability as bulk single crystals. However, its low depth brings a high surface defects ratio and hinders carrier transport and extraction, which affects the performance and stability of optoelectronic devices such as photodetectors, and thus surface defect passivation is of great practical significance. In this paper, we used the space confined method to grow MAPbBr3 SCF and selected BA2PbI4 for surface defect passivation. The results reveal that BA cation passivates MA vacancy surface defects, reduces carrier recombination, and enhances carrier lifetime. The carrier mobility is as high as 33.6 cm2V-1s-1, and the surface defect density is reduced to 3.4 × 1012 cm-3. Thus, the self-driven vertical MAPbBr3 SCF photodetector after surface passivation exhibits more excellent optoelectronic performance.
English
In-situ passivating surface defects of ultra-thin MAPbBr3 perovskite single crystal films for high performance photodetectors
Abstract:
Ultra-thin single crystal film (SCF) without grain boundary, inherits low charge recombination probability as bulk single crystals. However, its low depth brings a high surface defects ratio and hinders carrier transport and extraction, which affects the performance and stability of optoelectronic devices such as photodetectors, and thus surface defect passivation is of great practical significance. In this paper, we used the space confined method to grow MAPbBr3 SCF and selected BA2PbI4 for surface defect passivation. The results reveal that BA cation passivates MA vacancy surface defects, reduces carrier recombination, and enhances carrier lifetime. The carrier mobility is as high as 33.6 cm2V-1s-1, and the surface defect density is reduced to 3.4 × 1012 cm-3. Thus, the self-driven vertical MAPbBr3 SCF photodetector after surface passivation exhibits more excellent optoelectronic performance.
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Key words:
- Perovskite
- / Single crystal films
- / Space confined method
- / Surface passivation
- / Photodetectors
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