Citation: Weihong Ding, Kaiyue Song, Xianglong Li, Xiaoxia Sun. High-temperature-stable RRAMs with well-defined thermal effect mechanisms enable by engineering of robust 2D <100>-oriented organic-inorganic hybrid perovskites[J]. Chinese Chemical Letters, ;2025, 36(4): 110495. doi: 10.1016/j.cclet.2024.110495 shu

High-temperature-stable RRAMs with well-defined thermal effect mechanisms enable by engineering of robust 2D <100>-oriented organic-inorganic hybrid perovskites

Jiangxi Province Key Laboratory of Organic Functional Molecules, Institute of Organic Chemistry, Jiangxi Science and Technology Normal University, Nanchang 330013, China

sky@jxstnu.edu.cn

xlli@jxstnu.edu.cn

xxsun@jxstnu.edu.cn

Received Date: 11 June 2024
Revised Date: 22 September 2024
Accepted Date: 23 September 2024
Available Online: 24 September 2024

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The exploitation of organic-inorganic hybrid perovskites (OIHPs) as active layer materials for typical sandwich-structured resistive memories has attracted widespread interest due to the property of low power consumption and fast switching. However, the inherent thermal instability of perovskites limits the application of OIHPs-based resistive memories under extreme conditions, while the influence of thermal effects on their resistance change characteristics remains unclear. Herein, a novel 2D <100>-oriented high-temperature resistant OIHP [(BIZ-H)₂(PbBr₄)]_n (BIZ = benzimidazole) is prepared as an active layer material to fabricate FTO/[(BIZ-H)₂(PbBr₄)]_n/Ag resistive memory with excellent thermal reproducibility and stability up to 120 ℃. The increase in temperature leads to a decrease in the PbBr₆ octahedral distortion in the crystal structure, an increase in hydrogen bonding between the (BIZ-H)⁺ cation and the (PbBr₄)_n^2n- layer, and a shortening of the spacing of the inorganic layers, which is found to result in the creation and predominance of thermally activated traps with increasing temperature. This work provides a new direction for the next generation of OIHPs-based resistive memories with high-temperature tolerance.
- Resistive random-access memory,
- Organic-inorganic hybrid perovskites,
- High-temperature resistant,
- Thermal effect mechanisms
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