Citation: Yang Liu, Shuyu Li, Yihan Zhang, Xiaoting Zhu, Fangxu Yang, Fei Jiao, Wenping Hu. Highly crystalline, highly stable n-type ultrathin crystalline films enabled by solution blending strategy toward organic single-crystal electronics[J]. Chinese Chemical Letters, ;2024, 35(1): 108764. doi: 10.1016/j.cclet.2023.108764 shu

Highly crystalline, highly stable n-type ultrathin crystalline films enabled by solution blending strategy toward organic single-crystal electronics

Yang Liu ^a ,
Shuyu Li ^a ,
Yihan Zhang ^a ,
Xiaoting Zhu ^a ,
Fangxu Yang ^{a, *,} ,
Fei Jiao ^{a, *,} ,
Wenping Hu ^{a, b}

a.
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
b.
Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China

yangfangxu@tju.edu.cn

feijiao@tju.edu.cn

Received Date: 7 April 2023
Revised Date: 30 June 2023
Accepted Date: 4 July 2023
Available Online: 7 July 2023

Figures(4)

The development of n-type semiconductor is still far behind that of p-type semiconductor on account of the challenges in enhancing carrier mobility and environmental stability. Herein, by blending with the polymers, n-type ultrathin crystalline thin film was successfully prepared by the method of meniscus-guided coating. Remarkably, the n-type crystalline films exhibit ultrathin thickness as low as 5 nm and excellent mobility of 1.58 cm² V⁻¹ s⁻¹, which is outstanding in currently reported organic n-type transistors. Moreover, the PS layer provides a high-quality interface with ultralow defect which has strong resistance to external interference with excellent long-term stability, paving the way for the application of n-type transistors in logic circuits.
- n-type organic field effect transistors,
- Ultrathin film,
- High-performance,
- Composites
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