Citation: Cheng Wu, Xinzhi Luo, Xiaoming Yu, Xuan Yu, Kun Lin, Minghao Li, Zhenhua Li, Yu Cao, Yingtang Zhou. Improving performance of ZnO Schottky photodetector by inserting MXenes modified-layer[J]. Chinese Chemical Letters, ;2023, 34(7): 107881. doi: 10.1016/j.cclet.2022.107881 shu

Improving performance of ZnO Schottky photodetector by inserting MXenes modified-layer

Cheng Wu ^a ,
Xinzhi Luo ^b ,
Xiaoming Yu ^{a, b, *,} ,
Xuan Yu ^{a, b, *,} ,
Kun Lin ^a ,
Minghao Li ^a ,
Zhenhua Li ^a ,
Yu Cao ^c ,
Yingtang Zhou ^{b, *,}

a.
School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan 316022, China
b.
National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan 316022, China
c.
School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, China

yuxm@zjou.edu.cn

yuxuan@zjou.edu.cn

zhouyingtang@zjou.edu.cn

Received Date: 18 July 2022
Revised Date: 11 August 2022
Accepted Date: 4 October 2022
Available Online: 12 October 2022

Figures(4)

The development of low-cost and high-performance ZnO Schottky photodetectors (PDs) has drawn intensive attention, but still a challenge due to their poor conductivity and low light utilization efficiency. Here, we introduce Ti₃C₂T_X into ZnO films to fabricate Schottky UV PDs via facile spin-coated method. The fabricated ZnO/Ti₃C₂T_X/ZnO compound film shows outstanding performance on photocurrent, responsivity, noise equivalent power (NEP), normalized detection rate (D*), and linear dynamic region (LDR), compared with the original ZnO device. The photocurrent is significantly increased by 466%, and the responsivity is improved by one order of magnitude. In addition, it exhibits relatively low NEP (5.99 × 10⁻¹¹ W), strong D* (2.53 × 10⁹ Jones), and high LDR (28 dB). The superior performance is ascribed to the enhanced conductivity and light absorption of ZnO film after introduction of Ti₃C₂T_X modification layer, leading to simultaneously faster electron transfer, lower the radiation recombination of electron and holes on the ZnO/Ti₃C₂T_X/ZnO compound film. This work provides a facile way to develop low-cost and high-performance ZnO Schottky PDs.
- MXenes,
- Ti₃C₂T_X,
- Schottky,
- Photodetector,
- Responsivity,
- Normalized detectivity
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