Citation: Rong Rong, Liu Song. Reversible chemical switches of functionalized nitrogen-doped graphene field-effect transistors[J]. Chinese Chemical Letters, ;2020, 31(2): 565-569. doi: 10.1016/j.cclet.2019.05.014 shu

Reversible chemical switches of functionalized nitrogen-doped graphene field-effect transistors

Rong Rong ,
Liu Song ^*,

Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China

liusong@hnu.edu.cn

Received Date: 16 April 2019
Revised Date: 5 May 2019
Accepted Date: 7 May 2019
Available Online: 7 May 2019

Figures(5)

Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and applications. Herein, we report a method to noncovalently assembly titanium(Ⅳ) bis(ammoniumlactato) dihydroxide (Ti complex) on nitrogen-doped graphene to create a reliable hybrids which can be used as a reversible chemical induced switching. As the adsorption and desorption of Ti complex in sequential treatments, the conductance of the nitrogen-doped graphene transistors was finely modulated. Control experiments with pristine graphene clearly demonstrated the important effort of the nitrogen in this chemical sensor. Under optimized conditions, nitrogen-doped graphene transistors open up new ways to develop multifunctional devices with high sensitivity.
- Field-effect transistors,
- Nitrogen-doped graphene,
- Doping effect,
- Ti complex,
- Reversible switch
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