Citation: Qing-Bin Jiao, Xin Tan, Ji-Wei Zhu, Jian-Xiang Gao. The effects of ultrasound frequency and power on the activation energy in Si-KOH reaction system[J]. Chinese Chemical Letters, ;2014, 25(4): 617-620. doi: 10.1016/j.cclet.2013.12.012 shu

The effects of ultrasound frequency and power on the activation energy in Si-KOH reaction system

Qing-Bin Jiao ^a,b ,
^a,, ,
Xin Tan ^a ,
Ji-Wei Zhu ^a ,
Jian-Xiang Gao ^a

1.
a Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2.
b University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: ,
Received Date: 17 September 2013
Available Online: 6 December 2013
Fund Project:

The activation energy is the minimum amount of energy required to initiate a reaction. It is one of the important indexes for appraising a reaction. The chemical reaction rate is closely related to the value of activation energy, and reducing activation energy is propitious to promoting a chemical reaction. In the present paper, the relationship between the activation energy in Si-KOH reaction system and the ultrasound frequency and power has been discussed for the first time. The range of ultrasound frequency and power is 40-100 kHz (interval by 20 kHz) and 10-50W (interval by 10 W), respectively. The experimental data indicate that the activation energy decreases with the increasing ultrasound power. Comparing with the activation energy without ultrasound irradiation, the results in our paper indicate that ultrasound irradiation could reduce the activation energy in Si-KOH reaction system and increase the reaction rate.
- Si-KOH,
- Etching rate,
- Ultrasonic irradiation,
- Activation energy
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