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Citation: WU Yan, YAO Wen-Qing, ZHU Yong-Fa. Interfacial Structure of Ta₂O₅/Si Filmand Photoactivity[J]. Acta Physico-Chimica Sinica, ;2007, 23(05): 625-629. doi: 10.1016/S1872-1508(07)60038-2 shu

Interfacial Structure of Ta₂O₅/Si Filmand Photoactivity

1.
Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China

Received Date: 11 October 2006
Available Online: 11 April 2007

Tantalumoxide (Ta2O5) thin filmphotocatalysts were prepared on single crystal Si(110) substrates via sol-gel and spin coating methods. Ta2O5 crystallinity was improved, and the crystal size became larger with the increasing of heat treating temperature. The interface diffusion and reaction of the film were studied by using Auger electron spectroscopy (AES) depth profile and line shape analysis. Diffusion was dominant at the interface layer when the calcination, temperature was below 700 ℃. When the temperature reached 800 ℃, both interface diffusion and reaction occurred. The photocatalytic activity was studied using aqueous salicylic acid as a degradation probe molecule under UV-light irradiation. It was found that Ta2O5/Si filmshowed a photocatalytic activity similar to that of TiO2/Si film.
- Ta2O5/Si thin film; Auger electron spectroscopy; Interface diffusion; Interface reaction; Photocatalytic activity
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沈阳化工大学材料科学与工程学院沈阳 110142

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通讯作者: 陈斌, bchen63@163.com

Interfacial Structure of Ta₂O₅/Si Filmand Photoactivity