Citation: Chao Qian, Zhen-Guo Fan, Wei-Wen Zheng, Run-Xin Bei, Tian-Wen Zhu, Si-Wei Liu, Zhen-Guo Chi, Matthew P. Aldred, Xu-Dong Chen, Yi Zhang, Jia-Rui Xu. A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors[J]. Chinese Journal of Polymer Science, ;2020, 38(3): 213-219. doi: 10.1007/s10118-020-2339-4 shu

A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors

PCFM Lab, GD HPPC Lab, Guangdong Engineering Technology Research Centre for High-performance Organic and Polymer Photoelectric Functional Films, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry, Sun Yat-sen University, Guangzhou 510275, China

Corresponding author: Yi Zhang, ceszy@mail.sysu.edu.cn
Received Date: 14 June 2019
Revised Date: 27 July 2019
Available Online: 22 October 2019

High-performance low-k and low-loss circuit materials are urgently needed in the field of microelectronics due to the upcoming Fifth-Generation Mobile Communications Technology (5G Technology). Herein, a facile design strategy for non-fluorinated intrinsic low-k and low-loss polyimides is reported by fully considering the secondary relaxation behaviors of the polymer chains. A new amorphous non-fluorinated polymer (TmBPPA) with a k value of 2.23 and a loss tangent lower than 3.94 × 10⁻³ at 10⁴ Hz has been designed and synthesized, which to the best of our knowledge is the lowest value amongst the non-fluorinated and non-porous polymers reported in literature. Meanwhile, TmBPPA exhibits excellent overall properties, such as excellent thermostability, good mechanical properties, low moisture absorption, and high bonding strength. As high-performance flexible circuit materials, all these characteristics are highly expected to meet the present and future demands for high density, high speed, and high frequency electronic circuit used in 5G wireless networks.
- Polyimides,
- Low-k,
- Free volume,
- Secondary relaxation
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