采用共沉淀法制备了一系列NiAlCe_x(x=0.1、0.2、0.4、0.6，x为Ce的物质的量与Al和Ce总物质的量的比值)催化剂并应用于CO₂甲烷化反应，结果表明适量Ce的引入显著提高了NiAl催化CO₂甲烷化的低温催化活性。当x=0.2时，在220 ℃、100 kPa和24 000 mL·g^-1·h^-1的重时空速条件下，NiAlCe_x催化剂上的CO₂转化率达到80.6%。Ce的引入削弱了Ni与Al之间的相互作用，抑制了NiAl₂O₄尖晶石的生成，促进了催化剂中NiO组分的还原；提高了金属Ni的比表面积，从而有利于H₂的吸附和活化；增加了催化剂表面的碱位数量，促进了CO₂的吸附活化。稳定性实验表明，Ce的引入抑制了Ni的烧结团聚，提高了催化剂的稳定性。原位漫反射傅里叶变换红外光谱(DRIFTS)揭示，NiAl催化剂中引入Ce后，CO₂加氢的反应路径从CO中间体路径转变为甲酸盐中间体和CO中间体并存的双路径。

酰胺还原加氢是获得高附加值有机化合物的一种高效但极具挑战性的方法。本研究中，我们利用乙酰丙酮(Hacac)构筑的稀土多核配合物[Ce₄^ⅢCe₆^Ⅳ(μ₃-O)₄(μ₄-O)₄(acac)₁₄(CH₃O)₆]·2CH₃OH (Ce₁₀)作为路易斯酸催化剂，实现了高效的酰胺硼氢化还原反应，产率可达50%~99%。此外，该方法成功应用于抗抑郁药物苯乙胺的克级合成。通过核磁共振、单晶X射线衍射等分析手段，对该反应的催化机理进行了深入探究。

以V₂O₅/TiO₂催化剂为基体，制备了一系列Ce、Mn改性催化剂，并结合氮气吸附-脱附、X射线衍射、X射线光电子能谱、扫描电子显微镜分析了催化剂的结构及活性组成，探究了其反应活性。结果表明，制备的改性V₂O₅/TiO₂催化剂分散性好，Ce-Mn双金属改性提高了催化剂的NH₃转化率和N₂选择性。Ce、Mn负载量(Ce或Mn与TiO₂的质量比)分别为8%、6%时，310℃下改性材料的NH₃转化率为100%，N₂选择性为78%。原位漫反射傅里叶变换红外光谱表征显示催化剂表面羟基吸附的NH₃会优先参与反应，温度升高后催化剂表面的Brønsted和Lewis酸位点上吸附的NH₃开始参与反应，较高温度下Lewis酸位点是主要的NH₃转化位点。

The electronic structure, magnetic, and optical properties of two-dimensional(2D) GaSe doped with rare earth elements X (X=Sc, Y, La, Ce, Eu) were calculated using the first-principles plane wave method based on density functional theory. The results show that intrinsic 2D GaSe is a p-type nonmagnetic semiconductor with an indirect bandgap of 2.661 1 eV. The spin-up and spin-down channels of Sc-, Y-, and La-doped 2D GaSe are symmetric, they are non-magnetic semiconductors. The magnetic moments of Ce- and Eu- doped 2D GaSe are 0.908μ_B and 7.163μ_B, which are magnetic semiconductors. Impurity energy levels appear in both spin-up and spin-down channels of Eu-doped 2D GaSe, which enhances the probability of electron transition. Compared with intrinsic 2D GaSe, the static dielectric constant of the doped 2D GaSe increases, and the polarization ability is strengthened. The absorption spectrum of the doped 2D GaSe shifts in the low-energy direction, and the red-shift phenomenon occurs, which extends the absorption spectral range. The optical reflection coefficient of the doped 2D GaSe is improved in the low energy region, and the improvement of Eu-doped 2D GaSe is the most obvious.