Ti掺杂对(LaMn1-xTixO3)0.67(NiMn2O4)0.33(0≤x≤0.7)陶瓷材料微结构及电性能影响

引用本文: 关芳, 张惠敏, 赵丽君, 常爱民, 赵鹏君, 张博. Ti掺杂对(LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33(0≤x≤0.7)陶瓷材料微结构及电性能影响[J]. 无机化学学报, 2013, 29(4): 760-766. doi: 10.3969/j.issn.1001-4861.2013.00.086 shu

Citation: GUAN Fang, ZHANG Hui-Min, ZHAO Li-Jun, CHANG Ai-Min, ZHAO Peng-Jun, ZHANG Bo. Effect of Ti-Doped in (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 Ceramics on Microstructure and Electrical Properties[J]. Chinese Journal of Inorganic Chemistry, 2013, 29(4): 760-766. doi: 10.3969/j.issn.1001-4861.2013.00.086 shu

Ti掺杂对(LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33(0≤x≤0.7)陶瓷材料微结构及电性能影响

基金项目:
国家自然科学基金(No.50902148) (No.50902148)

中科院“西部之光”(No.RCPY200901) (No.RCPY200901)

新疆维吾尔自治区科技计划(No.201116147)资助项目。 (No.201116147)

摘要: 采用氧化物固相法制备(LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33系列NTC(Negative temperature coefficient)复合热敏电阻材料。利用TG/DSC、激光粒度分析、XRD、SEM、阻-温特性和老化性能测试等手段, 确定了粉体煅烧温度, 表征了粉体的颗粒尺寸、陶瓷体的物相、形貌及其电学特性、稳定性等与Ti掺杂量的关系。结果表明:在1 200~1 300℃烧结温度范围内, (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33复合体系的电阻率ρ_25℃随Ti含量的增加而显著增加;电阻率ρ_25℃和B值变化范围分别为4.4~53 179 Ω·cm、1 357~3 998 K。125℃下老化1 000 h阻值变化率ΔR/R₀均小于0.51%。该复合体系电阻率、B值调整范围较大, 稳定性好, 是一种具有实际应用价值的NTC热敏电阻材料。

关键词:

(LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33;Ti掺杂;NTC复合热敏陶瓷;电性能

English

Effect of Ti-Doped in (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 Ceramics on Microstructure and Electrical Properties

1.
1 Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
Received Date: 17 September 2012
Fund Project:
国家自然科学基金(No.50902148)

中科院“西部之光”(No.RCPY200901)

新疆维吾尔自治区科技计划(No.201116147)资助项目。

Abstract: A series of NTC (Negative temperature coefficient) composite material of (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 was prepared by solid-state method. The calcined temperature, particle size, ceramics phase structure, morphology, R-T property and electrical stability were characterized by TG/DSC, Laser particle size analyzer, XRD, SEM, resistance-temperature measurement and aging test, respectively. The results show that in the range of 1 200~1 300℃ sintered temperature, the electrical resistivity ρ_25℃ of the composite ceramics increased significantly with Ti content increased. The ρ_25℃ are found to be in the range of 4.4~53 179 Ω·cm and the B_25/50 values are 1 357~3 998 K. The resistance drift rate ΔR/R₀ of the composite ceramics after 1 000 h aging test at 125℃ was less than 0.51%. The electrical resistivity and B value of (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 could be adjusted to desired values. The composite system has high stability. Therefore, the (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 could be used for NTC thermistor as advanced semi-conducting materials.

Key words:

(LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33;Ti-doped;NTC composite thermistor ceramics;electrical property

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Ti掺杂对(LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33(0≤x≤0.7)陶瓷材料微结构及电性能影响

English

Effect of Ti-Doped in (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 Ceramics on Microstructure and Electrical Properties

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