温度对AACVD法制备AZO透明导电薄膜的影响

引用本文: 秦秀娟, 邵光杰, 赵琳. 温度对AACVD法制备AZO透明导电薄膜的影响[J]. 无机化学学报, 2013, 29(4): 723-728. doi: 10.3969/j.issn.1001-4861.2013.00.061 shu

Citation: QIN Xiu-Juan, SHAO Guang-Jie, ZHAO Lin. Effect of Substrate Temperature on the AZO Films Grown by AACVD Technique[J]. Chinese Journal of Inorganic Chemistry, 2013, 29(4): 723-728. doi: 10.3969/j.issn.1001-4861.2013.00.061 shu

温度对AACVD法制备AZO透明导电薄膜的影响

基金项目:
河北省自然科学基金(No.B2012203070) (No.B2012203070)

河北省教育厅科学研究计划河北省高等学校自然科学研究重点项目(No.ZH2011228)资助项目。 (No.ZH2011228)

摘要: 低成本、大面积、沉积速率高、均匀性好、光电性能优良的Al掺杂ZnO薄膜(AZO)制备技术依然是透明导电薄膜领域研究的重点之一。本文采用冷壁式气溶胶辅助化学气相沉积(AACVD)技术在玻璃衬底上制备了AZO透明导电薄膜, 研究了衬底温度对薄膜结构和光、电性能的影响。利用X射线衍射、原子力显微镜、紫外-可见光谱和光致发光光谱等对样品进行了表征。结果表明:在AACVD法生长AZO薄膜的过程中, 衬底温度对AZO薄膜晶面的择优取向生长影响呈起伏式变化。明显的电学性能的转变温度发生在约400℃, 光学性能和晶面的择优取向生长变化出现在约450℃。讨论了温度对AACVD法制备AZO透明导电薄膜结构和光、电性能影响的微观机制。400℃时沉积的AZO薄膜方阻190 Ω/□, 平均透过率为80%。

关键词:

气溶胶辅助化学气相沉积(AACVD);AZO薄膜;温度;极性半导体;结晶质量

English

Effect of Substrate Temperature on the AZO Films Grown by AACVD Technique

1.
1 Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao, Hebei 066004, China;
Received Date: 25 July 2012
Fund Project:
河北省自然科学基金(No.B2012203070)

河北省教育厅科学研究计划河北省高等学校自然科学研究重点项目(No.ZH2011228)资助项目。

Abstract: Al-doped ZnO thin films (AZO) fabrication technique with low cost, large area, high deposition rate, well uniformity and excellent optical and electrical properties has been one of the most important aims in the transparent conductive oxide films research field. AZO thin films were grown on the glass substrates by cold-wall aerosol-assisted chemical vapour deposition (AACVD) method in this paper. Structural, optical and electrical properties of AZO films grown at different substrate temperature were investigated in detail. The samples were tested by X-Ray Diffraction, Atomic Force Microscopy, UV-Vis and Photoluminescence Spectroscopy. Results indicate that influence of the substrate temperature on the preferred orientation growth of AZO films appears undulant change during the course of AZO film deposited by AACVD. Distinct electrical properties transition takes place at around 400℃. Optical properties and preferred orientation growth of the ZnO films transition take place at around 450℃. Microcosmic mechanism was discussed that the effect of substrate temperature on the structural, optical and electrical properties of AZO films grown by AACVD method. Sheet resistance and the average transmittances in the visible regions of AZO films grown at 400℃ is about 190 Ω/□, 80% respectively.

Key words:

aerosol-assisted chemical vapour deposition (AACVD);AZO film;temperature;polar semiconductor;crystalline quality

1. [1] JIANG Xin(姜辛), SUN Chao(孙超), HONG Rui-Jiang(洪瑞江), et al. Transparent Conductive Oxide Films(透明导电氧化物薄膜). Beijing: Higher Education Press, 2008:29,182, 282[1] JIANG Xin(姜辛), SUN Chao(孙超), HONG Rui-Jiang(洪瑞江), et al. Transparent Conductive Oxide Films(透明导电氧化物薄膜). Beijing: Higher Education Press, 2008:29,182, 282
2. [2] Zhao L, Shao G J, Song S T, et al. Rare Metal, 2011,30(2): 175-182[2] Zhao L, Shao G J, Song S T, et al. Rare Metal, 2011,30(2): 175-182
3. [3] QIN Xiu-Juan(秦秀娟), HANSI Hui-Zhi(韩司慧智), ZHAO Lin(赵琳), et al. J. Inorg. Mater.(Wuji Cailiao Xuebao), 2011,26(6):607-612[3] QIN Xiu-Juan(秦秀娟), HANSI Hui-Zhi(韩司慧智), ZHAO Lin(赵琳), et al. J. Inorg. Mater.(Wuji Cailiao Xuebao), 2011,26(6):607-612
4. [4] Zhao L, Qin X J, Shao G J. Chem. Vap. Deposition, 2012,18 (7-9):256-262[4] Zhao L, Qin X J, Shao G J. Chem. Vap. Deposition, 2012,18 (7-9):256-262
5. [5] Terasako T, Yamanaka T, Yura S, et al. Thin Solid Films, 2010,519(5):1546-1551[5] Terasako T, Yamanaka T, Yura S, et al. Thin Solid Films, 2010,519(5):1546-1551
6. [6] Illiberi A, Kniknie B, van Deelen J, et al. Sol. Energy Mater. Sol. Cells, 2011,95(7):1955-1959[6] Illiberi A, Kniknie B, van Deelen J, et al. Sol. Energy Mater. Sol. Cells, 2011,95(7):1955-1959
7. [7] Alvern U, Kudret A, Tekerek S. J. Phys. Chem. Solids, 2011, 72(6):701-704[7] Alvern U, Kudret A, Tekerek S. J. Phys. Chem. Solids, 2011, 72(6):701-704
8. [8] Gledhill S, Grimm A, Greiner D, et al. Thin Solid Films, 2011,519(13):4293-4298[8] Gledhill S, Grimm A, Greiner D, et al. Thin Solid Films, 2011,519(13):4293-4298
9. [9] Prasada Rao T, Santhoshkumar M C. Appl. Surf. Sci., 2009, 255(16):7212-7215[9] Prasada Rao T, Santhoshkumar M C. Appl. Surf. Sci., 2009, 255(16):7212-7215
10. [10] Binions R, Claire C, Carmalt J, et al. Thin Solid Films, 2004,469-470:416-419[10] Binions R, Claire C, Carmalt J, et al. Thin Solid Films, 2004,469-470:416-419
11. [11] Walters G, Parkin I P. Appl. Surf. Sci., 2009,255(13-14): 6555-6560[11] Walters G, Parkin I P. Appl. Surf. Sci., 2009,255(13-14): 6555-6560
12. [12] Zhao L, Shao G J, Qin X J, et al. J. Alloys Compd., 2011, 509(30):L₂97-L300[12] Zhao L, Shao G J, Qin X J, et al. J. Alloys Compd., 2011, 509(30):L₂97-L300
13. [13] Islam M M, Ishizuka S, Yamada A, et al. Appl. Surf. Sci., 2011,257(9):4026-4030[13] Islam M M, Ishizuka S, Yamada A, et al. Appl. Surf. Sci., 2011,257(9):4026-4030
14. [14] Saito K, Watanabe Y, Takahashi K, et al. Sol. Energy Mater. Sol. Cells, 1997,49(1/2/3/4):187-193[14] Saito K, Watanabe Y, Takahashi K, et al. Sol. Energy Mater. Sol. Cells, 1997,49(1/2/3/4):187-193
15. [15] Chakraborty A, Mondal T, Bera S K, et al. Mater. Chem. Phys., 2008,112(1):162-166[15] Chakraborty A, Mondal T, Bera S K, et al. Mater. Chem. Phys., 2008,112(1):162-166
16. [16] YAO Lian-Zeng(姚连增). Foundation of Crystal Growth(晶体生长基础). Hefei: University of Science and Technology of China Press, 1995:450[16] YAO Lian-Zeng(姚连增). Foundation of Crystal Growth(晶体生长基础). Hefei: University of Science and Technology of China Press, 1995:450
17. [17] McLachlan M A, Rahman H, Illy B, et al. Mater. Chem. Phys., 2011,129(1-2):343-348[17] McLachlan M A, Rahman H, Illy B, et al. Mater. Chem. Phys., 2011,129(1-2):343-348
18. [18] JI Zhen-Guo(季振国). Semiconductor Physics(半导体物理). Hangzhou: Zhejiang University Press, 2005:54[18] JI Zhen-Guo(季振国). Semiconductor Physics(半导体物理). Hangzhou: Zhejiang University Press, 2005:54
19. [19] Terasako T, Yamanaka T, Yura S, et al. Thin Solid Films, 2010,519(5):1546-1551[19] Terasako T, Yamanaka T, Yura S, et al. Thin Solid Films, 2010,519(5):1546-1551
20. [20] TIAN Xiao-Liang(田晓亮), SUN Wan-Ting(孙婉婷), XIE Ming-Zheng(谢明政), et al. Chinese J. Inorg. Chem.(Wuji Huaxue Xuebao), 2012,28(7):1441-1446a[20] TIAN Xiao-Liang(田晓亮), SUN Wan-Ting(孙婉婷), XIE Ming-Zheng(谢明政), et al. Chinese J. Inorg. Chem.(Wuji Huaxue Xuebao), 2012,28(7):1441-1446a

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沈阳化工大学材料科学与工程学院沈阳 110142

温度对AACVD法制备AZO透明导电薄膜的影响

English

Effect of Substrate Temperature on the AZO Films Grown by AACVD Technique

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温度对AACVD法制备AZO透明导电薄膜的影响

English

Effect of Substrate Temperature on the AZO Films Grown by AACVD Technique

CCS Chemistry：嵌段共聚物自组装成 “三明治”二维有机材料，实现纳米级压力传感功能

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