<em>n</em>型半导体硅电极表面Au的电化学成核机理

引用本文: 吴小英, 杨丽坤, 闫慧, 杨防祖, 田中群, 周绍民. n型半导体硅电极表面Au的电化学成核机理[J]. 物理化学学报, 2015, 31(9): 1708-1714. doi: 10.3866/PKU.WHXB201507101 shu

Citation: WU Xiao-Ying, YANG Li-Kun, YAN Hui, YANG Fang-Zu, TIAN Zhong-Qun, ZHOU Shao-Min. Electrochemical Nucleation of Au on n-Type Semiconductor Silicon Electrode Surface[J]. Acta Physico-Chimica Sinica, 2015, 31(9): 1708-1714. doi: 10.3866/PKU.WHXB201507101 shu

n型半导体硅电极表面Au的电化学成核机理

基金项目:
国家重大科学仪器设备开发专项(2011YQ03012406) (2011YQ03012406)

国家自然科学基金界面电化学创新群体(21321062) (21321062)

国家自然科学基金(21373172)资助项目 (21373172)

摘要:

在成功实现半导体硅表面电沉积致密金膜的柠檬酸盐镀金实际应用体系中, 运用循环伏安和电位阶跃法研究了Au在n型Si(111)电极表面的电沉积过程和成核机理. 结果表明, 在该体系中, Au在Si表面呈现不可逆电极过程, 成核过电位达到250 mV; 根据Cottrell方程求得扩散系数D = (1.81 ± 0.14) × 10^-4 cm₂·s^-1; 运用Scharifker-Hills (SH)理论模型对比分析拟合实验结果, 表明Au在n型Si表面遵循扩散控制下的三维连续成核机理; 通过扫描电子显微镜观察Au初期成核、生长形貌, 进一步证实了Au的三维连续成核机制, 并讨论了阶跃电位和阶跃时间对Au核形貌和密度的影响.

关键词:

n型硅
/ Au
/ 循环伏安
/ 电位阶跃
/ 成核机理

English

Electrochemical Nucleation of Au on n-Type Semiconductor Silicon Electrode Surface

1.
State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, Fujian Province, P. R. China
Received Date: 03 April 2015
Available Online: 06 September 2015
Fund Project:
国家重大科学仪器设备开发专项(2011YQ03012406)

国家自然科学基金界面电化学创新群体(21321062)

国家自然科学基金(21373172)资助项目

Abstract:

Cyclic voltammetry and chronoamperometry have been used to investigate the mechanism of ld electrodeposition on the n-Si(111) electrode surface from a citrate bath, which had successfully applied to directly electroplate a dense ld film on the silicon surface. The results show that Au electrodeposition on the n-type silicon surface is an irreversible process, and the nucleation overpotential reaches 250 mV. According to Cottrell equation, the diffusion coefficient (D) is calculated to be (1.81 ± 0.14) × 10^-4 cm₂·s^-1. The Scharifker-Hills (SH) model was used to analyze the experimental data. Agreement between the fitting curves and the theoretical curves confirms that the nucleation process of Au electrodeposition on the n-type silicon surface follows the progressive nucleation mechanism with three-dimensional growth under diffusion control. To further confirm the progressive nucleation mechanism, scanning electron microscopy (SEM) was used to observe the nucleation and growth of Au deposits at the initial stage of electrodeposition. The SEM results show that the morphology and density of the Au deposits are affected by the electrochemical deposition potential and time.

Key words:

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

n型半导体硅电极表面Au的电化学成核机理

English

Electrochemical Nucleation of Au on n-Type Semiconductor Silicon Electrode Surface

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通讯作者: 陈斌, bchen63@163.com

中国化学会秘书处

n型半导体硅电极表面Au的电化学成核机理

English

Electrochemical Nucleation of Au on n-Type Semiconductor Silicon Electrode Surface

CCS Chemistry：嵌段共聚物自组装成 “三明治”二维有机材料，实现纳米级压力传感功能

CCS Chemistry：颜徐州、鲍哲南： 你的皮肤可能是一片SPMs

CCS Chemistry：工作高效不疲劳，只须让催化剂动起来

CCS Chemistry：静电组装导向聚合- 聚电解质纳米凝胶量化制备新策略

CCS Chemistry：金黄色葡萄球菌醛基脱氢酶是如何识别特异性底物的？

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