引用本文:
李娟, 莫晓亮, 孙大林, 陈国荣. 单步电沉积法制备CuInS2薄膜[J]. 物理化学学报,
2009, 25(12): 2445-2449.
doi:
10.3866/PKU.WHXB20091125
Citation: LI Juan, MO Xiao-Liang, SUN Da-Lin, CHEN Guo-Rong. Preparation of CuInS2 Thin Films by One-Step Electrodeposition[J]. Acta Physico-Chimica Sinica, 2009, 25(12): 2445-2449. doi: 10.3866/PKU.WHXB20091125
Citation: LI Juan, MO Xiao-Liang, SUN Da-Lin, CHEN Guo-Rong. Preparation of CuInS2 Thin Films by One-Step Electrodeposition[J]. Acta Physico-Chimica Sinica, 2009, 25(12): 2445-2449. doi: 10.3866/PKU.WHXB20091125
单步电沉积法制备CuInS2薄膜
English
Preparation of CuInS2 Thin Films by One-Step Electrodeposition
Abstract:
I-III-VI2 ternary chalcopyrite copper indium disulfide (CuInS2) films were prepared by one-step electrodeposition technique on molybdenum substrates. The structure and morphology of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The effects of deposition potential, annealing temperature, pH, and solution concentration on the formation of the electrodeposited thin films were investigated. The prepared CuInS2 thin films were found to be compact and uniform with grain sizes of 1-2 μm. Their optical property was characterized by UV-Vis spectrophotometry and the bandgap value was calculated to be 1.41 eV.
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Key words:
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Solar cell
- / CuInS2
- / One-step electrodeposition
- / Deposition potential
- / Annealing temperature
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