引用本文:
彭志坚, 司文捷, 谢茂浓, 傅鹤鉴, 苗赫濯. 金属-聚硅烷-硅结构的电容－电压特性[J]. 物理化学学报,
2003, 19(02): 97-99.
doi:
10.3866/PKU.WHXB20030201
Citation: Peng Zhi-Jian, Si Wen-Jie, Xie Mao-Nong, Fu He-Jian, Miao He-Zhuo. C－V Characteristics of Metal-Polysilane-Silicon Structures[J]. Acta Physico-Chimica Sinica, 2003, 19(02): 97-99. doi: 10.3866/PKU.WHXB20030201
Citation: Peng Zhi-Jian, Si Wen-Jie, Xie Mao-Nong, Fu He-Jian, Miao He-Zhuo. C－V Characteristics of Metal-Polysilane-Silicon Structures[J]. Acta Physico-Chimica Sinica, 2003, 19(02): 97-99. doi: 10.3866/PKU.WHXB20030201
金属-聚硅烷-硅结构的电容－电压特性
摘要:
设计了metal-polysilane-silicon (MPS)结构.首次发现MPS结构具有电容-电压（C－V）特性,许多MPS结构的C－V曲线平带电压为正,且其C－V特性与聚硅烷枝化度一致,即随着聚硅烷枝化度提高,MPS结构C－V曲线明显向电压轴正向漂移.聚硅烷MPS结构有望设计成测定聚硅烷枝化度装置.
English
C－V Characteristics of Metal-Polysilane-Silicon Structures
Abstract:
Metal-polysilane-silicon(MPS) structures were designed in this investigation. It was first discovered that the MPS structures possessed capacitance-voltage(C－V) characteristics, and the C－V characteristics were consistent with the branching densities of the polysilanes, i.e., with the increase in branching densities, the C－V curves drifted more dramatically towards the positive direction of the electrical voltage axis. The MPS structures may be promising in designing devices for the measurement of the branching densities of the branched polysilanes. Many of the flat-band voltages of the MPS structures were positive, which played positive roles in semiconductor devices.
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