Intrinsic Ultrahigh Negative Poisson's Ratio in Two-Dimensional Ferroelectric ABP<sub>2</sub>X<sub>6</sub> Materials

Citation: ZHANG Chunmei, NIE Yihan, DU Aijun. Intrinsic Ultrahigh Negative Poisson's Ratio in Two-Dimensional Ferroelectric ABP₂X₆ Materials[J]. Acta Physico-Chimica Sinica, 2019, 35(10): 1128-1133. doi: 10.3866/PKU.WHXB201812037 shu

二维铁电材料ABP₂X₆内在极高的负泊松比

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昆士兰科技大学科学与工程学院，化学物理与机械工程系，澳大利亚，昆士兰州，布里斯班 4001

通讯作者: 杜爱军, aijun.du@qut.edu.au

摘要: 引发科研人员极大兴趣的二维铁电材料由于极好的电子读写性能，是下一代电路设计的重要组成。但是，二维铁电材料非常罕见。最近具有ABP₂X₆ (A = Ag, Cu; B = Bi, In; X = S, Se)形式的二维铁电材料，由于可制备超薄铁电材料，掀起了广泛的研究热潮。在ABP₂X₆单层内，P―P键形成支撑顶部和底部X平面的结构，同时位于X层之间的偏心A-B原子引起自发的铁电极化。如果两个偏心的A-B位置均匀对齐，则会导致顺电状态的出现。这种有趣的结构具有潜在的新颖的机械性能。截至目前，单层ABP₂X₆尚无力学性能报告。基于第一性原理计算，我们研究了单层ABP₂X₆ (A = Ag, Cu; B = Bi, In; X = S, Se)的结构、电子、力学以及电力耦合性质。通过杂化密度泛函方法计算，发现它们都是有很宽带隙的半导体。CuInP₂Se₆，CuBiP₂Se₆，AgBiP₂S₆和AgBiP₂Se₆的能带带隙分别是2.73，2.17，3.00和2.31 eV。价带顶主要是由X和B原子的p轨道构成，而导带底主要来源于X原子的p轨道和A原子的d轨道杂化。另外，A-B偏心位移有三个短A/B―X键，再加上d-p轨道杂化，我们推测ABP₂X₆单层中铁电结构扭曲的主要原因是Jahn-Teller影响。更有趣的是，ABP₂X₆单层是具有垂直于平面负泊松比的新类型的拉胀材料，负泊松比的数值有如下关系：AgBiP₂S₆ (−0.805) < AgBiP₂Se₆ (−0.778) < CuBiP₂Se₆ (−0.670) < CuInP₂S₆ (−0.060)。这主要是由于在x/y方向上施加的拉伸应变增大了P―P键和顶层X原子之间的角度，因此增加了单层ABP₂X₆的垂直平面方向的褶皱高度。此外，外部应变对A-B偏心位移具有显著影响，从而产生垂直于平面的压电极化。CuInP₂S₆，CuBiP₂Se₆，AgBiP₂S₆，AgBiP₂Se₆单层的e₁₃值计算为−3.95 × 10⁻¹², −5.68 × 10⁻¹², −3.94 × 10⁻¹², −2.71 × 10⁻¹² C∙m⁻¹，与实验证实的二维平面外压电Janus系统相当(压电系数为−3.8 × 10⁻¹² C∙m⁻¹)。这种不寻常的拉胀行为、铁电极化以及单层ABP₂X₆中的电力耦合可能会在纳米电子学、纳米力学和压电学中产生巨大的技术重要应用。

关键词:

负泊松比
/ 铁电
/ 半导体
/ ABP₂X₆
/ 力学
/ 压电

English

Intrinsic Ultrahigh Negative Poisson's Ratio in Two-Dimensional Ferroelectric ABP₂X₆ Materials

School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4001, Australia

Corresponding author: DU Aijun, aijun.du@qut.edu.au

Received Date: 21 December 2018
Accepted Date: 24 January 2019
Revised Date: 24 January 2019
Available Online: 15 October 2019
Fund Project:

D.A. acknowledges the financial support by Australian Research Council under Discovery Project (DP170103598)

Abstract: Recently, ferroelectric materials have attracted considerable research attention. In particular, two dimensional (2D) ferroelectric materials have been considered as most crucial for next-generation circuit designs because of their application as novel electric memory devices. However, a 2D ferroelectric material is very rare. The ferroelectric materials with the form ABP₂X₆ (A = Ag, Cu; B = Bi, In; X = S, Se) are of interest because of their ferroelectric property maintained in their ultrathin structures. Within the ABP₂X₆ monolayer, the P―P bonds form the pillars that hold the top and bottom X planes, while the off-center A―B atoms between the X layers induce a spontaneous ferroelectric polarization. If the two off-center A―B sites are equally aligned, this would lead to the appearance of the paraelectric state. Such intriguing structures must impart novel mechanical properties to the materials. Until now, there has been no report on the mechanical properties of monolayer ABP₂X₆. Based on ﬁrst-principles calculations, we studied the structural, electronic, mechanical as well as the electromechanical coupling properties of monolayer ABP₂X₆ (A = Ag, Cu; B = Bi, In; X = S, Se). We found that they are all semiconductors with wide bandgaps of 2.73, 2.17, 3.00, and 2.31 eV for CuInP₂Se₆, CuBiP₂Se₆, AgBiP₂S₆, and AgBiP₂Se₆, respectively, which are calculated based on the Heyd-Scuseria-Ernzerhof (HSE) exchange correlation functional model. The conduction band minimum is mainly from p orbitals of X and B atoms, whereas the valence band maximum is due to the hybridization of the p orbital of X atoms and the d orbital of A atoms. Moreover, there are three short and three long A/B―X bonds due to the A―B off-center displacement. Together with the d-p orbital hybridization, the main reason for the distorted ferroelectric structure in ABP₂X₆ monolayers is the Jahn-Teller effect. ABP₂X₆ monolayers are predicted to be a new class of auxetic materials with an out-of-plane negative Poisson's ratio, i.e., the values of the negative Poisson's ratio are in the order AgBiP₂S₆ (−0.805) < AgBiP₂Se₆ (−0.778) < CuBiP₂Se₆ (−0.670) < CuInP₂S₆ (−0.060). This is mainly due to the tensile strain applied in the x/y direction enlarging the angle between P―P bonds and top layer X atoms, thereby enhancing the bucking height of monolayer ABP₂X₆. Moreover, external strain has a significant impact on the A―B off-center displacement, rendering an out-of-plane piezoelectric polarization. The values of e₁₃ for CuInP₂S₆, CuBiP₂Se₆, AgBiP₂S₆, AgBiP₂Se₆ monolayers are calculated to be −3.95 × 10⁻¹², −5.68 × 10⁻¹², −3.94 × 10⁻¹², −2.71 × 10⁻¹² C∙m⁻¹, respectively, which are comparable to the only experimentally confirmed 2D out-of-plane piezoelectric Janus system (piezoelectric coefficient = −3.8 × 10⁻¹² C∙m⁻¹). This unusual auxetic behavior, ferroelectric polarization, and the electromechanical coupling in monolayer ABP₂X₆ could potentially lead to enormous technologically important applications in nanoelectronics, nanomechanics, and piezoelectrics.

Key words:

1. [1]
  Evans, K. E.; Alderson, A. Adv. Mater. 2000, 12, 617. doi: 10.1002/(SICI)1521-4095(200005)12:9<617::AID-ADMA617 >3.0.CO;2-3
2. [2]
  Dagdelen, J.; Montoya, J.; de Jong, M.; Persson, K. Nat. Commun. 2017, 8, 323. doi: 10.1038/s41467-017-00399-6
3. [3]
  Wang, Y.; Li, F.; Li, Y.; Chen, Z. Nat. Commun. 2016, 7, 11488. doi: 10.1038/ncomms11488
4. [4]
  Jiang, J. W.; Park, H. S. Nat. Commun. 2014, 5, 4727. doi: 10.1038/ncomms5727
5. [5]
  Wang, H.; Li, X.; Sun, J.; Liu, Z.; Yang, J. 2D Mater. 2017, 4, 045020. doi: 10.1088/2053-1583/aa8abd
6. [6]
  Zhang, L. C.; Qin, G.; Fang, W. Z.; Cui, H. J.; Zheng, Q. R.; Yan, Q. B.; Su, G. Sci. Rep. 2016, 6, 19830. doi: 10.1038/srep19830
7. [7]
  Zhang, S.; Zhou, J.; Wang, Q.; Chen, X.; Kawazoe, Y.; Jena, P. Proc. Natl. Acad. Sci. USA 2015, 112, 2372. doi: 10.1073/pnas.1416591112
8. [8]
  Gao, Z.; Dong, X.; Li, N.; Ren, J. Nano Lett. 2017, 17, 772. doi: 10.1021/acs.nanolett.6b03921
9. [9]
  Wang, H.; Li, Q.; Gao, Y.; Miao, F.; Zhou, X. F.; Wan, X. New J. Phy. 2016, 18, 073016. doi: 10.1088/1367-2630/18/7/073016
10. [10]
  Kou, L.; Ma, Y.; Tang, C.; Sun, Z.; Du, A.; Chen, C. Nano Lett. 2016, 16, 7910. doi: 10.1021/acs.nanolett.6b04180
11. [11]
  Zhou, L.; Zhuo, Z.; Kou, L.; Du, A.; Tretiak, S. Nano Lett. 2017, 17, 4466. doi: 10.1021/acs.nanolett.7b01704
12. [12]
  Zhang, C.; Jiao, Y.; He, T.; Bottle, S.; Frauenheim, T.; Du, A. J. Phys. Chem. Lett. 2018, 9, 858. doi: 10.1021/acs.jpclett.7b03449
13. [13]
  Wang, B.; Yuan, S.; Li, Y.; Shi, L.; Wang, J. Nanoscale 2017, 9, 5577. doi: 10.1039/C7NR00455A
14. [14]
  Huang, C.; Du, Y.; Wu, H.; Xiang, H.; Deng, K.; Kan, E. Phys. Rev. Lett. 2018, 120, 147601. doi: 10.1103/Phys. Rev. Lett.120.147601
15. [15]
  Zhang, C.; Nie, Y.; Sanvito, S.; Du, A. Nano Lett. 2019, doi: 10.1021/acs.nanolett.8b05050
16. [16]
  Maisonneuve, V.; Cajipe, V.; Simon, A.; Von Der Muhll, R.; Ravez, J. Phys. Rev. B 1997, 56, 10860. doi: 10.1103/PhysRevB.56.10860
17. [17]
  Gave, M. A.; Bilc, D.; Mahanti, S.; Breshears, J. D.; Kanatzidis, M. G. Inorg. Chem. 2005, 44, 5293. doi: 10.1021/ic050357+
18. [18]
  Reimers, J. R.; Tawfik, S. A.; Ford, M. J. Chem. Sci. 2018, 9, 7620. doi: 10.1039/C8SC01274A
19. [19]
  Liu, F.; You, L.; Seyler, K. L.; Li, X.; Yu, P.; Lin, J.; Wang, X.; Zhou, J.; Wang, H.; He, H. Nat. Commun. 2016, 7, 12357. doi: 10.1038/ncomms12357
20. [20]
  Song, W.; Fei, R.; Yang, L. Phys. Rev. B 2017, 96, 235420. doi: 10.1103/PhysRevB.96.235420
21. [21]
  Xu, B.; Xiang, H.; Xia, Y.; Jiang, K.; Wan, X.; He, J.; Yin, J.; Liu, Z. Nanoscale 2017, 9, 8427. doi: 10.1039/C7NR02461D
22. [22]
  Lai Y., Song Z., Wan Y., Xue M., Ye Y., Dai L., Yang W., Du H. arXiv preprint arXiv: 1805.04280 2018.
23. [23]
  Shirodkar, S. N.; Waghmare, U. V. Phys. Rev. Lett. 2014, 112, 157601. doi: 10.1103/PhysRevLett.112.157601
24. [24]
  Fei, R.; Kang, W.; Yang, L. Phys. Rev. Lett. 2016, 117, 097601. doi: 10.1103/PhysRevLett.117.097601
25. [25]
  Yu, L.; Yan, Q.; Ruzsinszky, A. Nat. Commun. 2017, 8, 15224. doi: 10.1038/ncomms15224
26. [26]
  Wu, M.; Zeng, X. C. Nano Lett. 2016, 16, 3236. doi: 10.1021/acs.nanolett.6b00726
27. [27]
  Kresse, G.; Furthmüller, J. Comp. Mater. Sci. 1996, 6, 15. doi: 10.1016/0927-0256(96)00008-0
28. [28]
  Kresse, G.; Furthmüller, J. Phy. Rev. B 1996, 54, 11169. doi: 10.1103/PhysRevB.54.11169
29. [29]
  Blöchl, P. E. Phy. Rev. B 1994, 50, 17953. doi: 10.1103/PhysRevB.50.17953
30. [30]
  Perdew, J. P.; Burke, K.; Ernzerhof, M. Phys. Rev. Lett. 1996, 77, 3865. doi: 10.1103/PhysRevLett.77.3865
31. [31]
  Heyd, J.; Scuseria, G. E.; Ernzerhof, M. J. Chem. Phys. 2003, 118, 8207. doi: 10.1063/1.1564060
32. [32]
  Grimme, S. J. Comput. Chem. 2006, 27, 1787. doi: 10.1002/jcc.20495
33. [33]
  King-Smith, R.; Vanderbilt, D. Phys. Rev. B 1993, 47, 1651. doi: 10.1103/PhysRevB.47.1651
34. [34]
  Zhang, C.; Kou, L.; He, T.; Jiao, Y.; Liao, T.; Bottle, S.; Du, A. Computat. Mater. Sci. 2018, 149, 158. doi: 10.1016/j.commatsci.2018.03.027
35. [35]
  Zhang, C.; Jiao, Y.; Ma, F.; Bottle, S.; Zhao, M.; Chen, Z.; Du, A. Phys. Chem. Chem. Phys. 2017, 19, 5449. doi: 10.1039/C7CP00157F
36. [36]
  Zhang, C.; Jiao, Y.; He, T.; Ma, F.; Kou, L.; Liao, T.; Bottle, S.; Du, A. Phys. Chem. Chem. Phys. 2017, 19, 25886. doi: 10.1039/C7CP04758D
37. [37]
  Zhang, C.; Du, A. Beilstein J. Nanotechnol. 2018, 9, 1399. doi: 10.3762/bjnano.9.132
38. [38]
  Zhang, C.; Nie, Y.; Liao, T.; Kou, L.; Du, A. Phys. Rev. B 2019, 99, 035424. doi: 10.1103/PhysRevB.99.035424
39. [39]
  Wei, S. H.; Zhang, S.; Zunger, A. Phys. Rev. Lett. 1993, 70, 1639. doi: 10.1103/PhysRevLett.70.1639
40. [40]
  Wu, W.; Wang, L.; Li, Y.; Zhang, F.; Lin, L.; Niu, S.; Chenet, D.; Zhang, X.; Hao, Y.; Heinz, T. F. Nature 2014, 514, 470. doi: 10.1038/nature13792
41. [41]
  Lu, A. Y.; Zhu, H.; Xiao, J.; Chuu, C. P.; Han, Y.; Chiu, M. H.; Cheng, C. C.; Yang, C. W.; Wei, K. H.; Yang, Y. Nat. Nanotechnol. 2017, 12, 744. doi: 10.1038/nnano.2017.100
42. [42]
  Li, R.; Cheng, Y.; Huang, W. Small 2018, 14, 1802091. doi: 10.1002/smll.201802091

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

二维铁电材料ABP₂X₆内在极高的负泊松比

通讯作者: 杜爱军, aijun.du@qut.edu.au

English

Intrinsic Ultrahigh Negative Poisson's Ratio in Two-Dimensional Ferroelectric ABP₂X₆ Materials

Corresponding author: DU Aijun, aijun.du@qut.edu.au

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中国化学会秘书处

二维铁电材料ABP2X6内在极高的负泊松比

通讯作者: 杜爱军, aijun.du@qut.edu.au

English

Intrinsic Ultrahigh Negative Poisson's Ratio in Two-Dimensional Ferroelectric ABP2X6 Materials

Corresponding author: DU Aijun, aijun.du@qut.edu.au

CCS Chemistry：嵌段共聚物自组装成 “三明治”二维有机材料，实现纳米级压力传感功能

CCS Chemistry：颜徐州、鲍哲南： 你的皮肤可能是一片SPMs

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通讯作者: 陈斌, bchen63@163.com

中国化学会秘书处

二维铁电材料ABP₂X₆内在极高的负泊松比

Intrinsic Ultrahigh Negative Poisson's Ratio in Two-Dimensional Ferroelectric ABP₂X₆ Materials

CCS Chemistry：颜徐州、鲍哲南：你的皮肤可能是一片SPMs