碳纳米管薄膜晶体管中的接触电阻效应

引用本文: 夏继业, 董国栋, 田博元, 严秋平, 韩杰, 邱松, 李清文, 梁学磊, 彭练矛. 碳纳米管薄膜晶体管中的接触电阻效应[J]. 物理化学学报, 2016, 32(4): 1029-1035. doi: 10.3866/PKU.WHXB201601292 shu

Citation: XIA Ji-Ye, DONG Guo-Dong, TIAN Bo-Yuan, YAN Qiu-Ping, HAN Jie, QIU Song, LI Qing-Wen, LIANG Xue-Lei, PENG Lian-Mao. Contact Resistance Effects in Carbon Nanotube Thin Film Transistors[J]. Acta Physico-Chimica Sinica, 2016, 32(4): 1029-1035. doi: 10.3866/PKU.WHXB201601292 shu

碳纳米管薄膜晶体管中的接触电阻效应

夏继业 ^1, ,
董国栋 ^1, ,
田博元 ^1, ,
严秋平 ^1, ,
韩杰 ^2, ,
邱松 ^2, ,
李清文 ^2, ,
梁学磊 ^{1,
,} ,
彭练矛 ^1,

1.
1. 北京大学信息科学技术学院, 纳米器件与物理化学教育部重点实验室, 北京 100871;
2.
2. 中国科学院苏州纳米技术与纳米仿生研究所, 江苏苏州 215123

通讯作者: 梁学磊

基金项目:
国家自然科学基金(61321001) (61321001)

北京市科学技术委员会(Z141100003814006) (Z141100003814006)

教育部(113003A)资助项目 (113003A)

摘要: 利用不同功函数的金属作为接触电极,研究了网络状碳纳米管薄膜晶体管(CNT-TFT)的接触电阻效应。研究表明金属Pd与碳纳米管薄膜形成良好的欧姆接触,Au则形成近欧姆接触,这两种接触的器件的开态电流和迁移率较高。Ti 和Al 都与碳纳米管薄膜形成肖特基接触,且Al 接触比Ti 接触的势垒更高,接触电阻也更大,相应器件的开态电流和迁移率都较低。该结果表明对于CNT-TFT仍然可以通过接触来调控器件的性能,这对CNT-TFT的实用化进程具有重要的促进作用。

关键词:

English

Contact Resistance Effects in Carbon Nanotube Thin Film Transistors

1.
1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China;
2.
2. Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu Province, P. R. China

Corresponding author: 梁学磊

Received Date: 11 December 2015
Available Online: 29 January 2016
Fund Project:
国家自然科学基金(61321001)

北京市科学技术委员会(Z141100003814006)

教育部(113003A)资助项目

Abstract: The contact resistance effect in the network type carbon nanotube thin film transistors (CNT-TFTs) is studied by using different contact metals. It is shown that palladium (Pd) can form an ohmic type contact with the carbon nanotube thin film, and gold (Au) forms an almost ohmic contact. On-state current and carrier mobility in the devices of these two contacts are high. In contrast, both titanium (Ti) and aluminum (Al) form Schottkytype contacts with the carbon nanotube thin film. The barrier height and the contact resistance of the Al contact are higher than those of the Ti contact. Therefore, the on-state current and carrier mobility are relatively low in the corresponding devices of these two types of contacts. These results indicate that the performance of CNTTFTs can be tuned by the contact metal, which is important for the commercialization of CNT-TFTs.

Key words:

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

碳纳米管薄膜晶体管中的接触电阻效应

通讯作者: 梁学磊

English

Contact Resistance Effects in Carbon Nanotube Thin Film Transistors

Corresponding author: 梁学磊

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通讯作者: 陈斌, bchen63@163.com

中国化学会秘书处

碳纳米管薄膜晶体管中的接触电阻效应

通讯作者: 梁学磊

English

Contact Resistance Effects in Carbon Nanotube Thin Film Transistors

Corresponding author: 梁学磊

CCS Chemistry：嵌段共聚物自组装成 “三明治”二维有机材料，实现纳米级压力传感功能

CCS Chemistry：颜徐州、鲍哲南： 你的皮肤可能是一片SPMs

CCS Chemistry：工作高效不疲劳，只须让催化剂动起来

CCS Chemistry：静电组装导向聚合- 聚电解质纳米凝胶量化制备新策略

CCS Chemistry：金黄色葡萄球菌醛基脱氢酶是如何识别特异性底物的？

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