
Citation: MA Hui-Ling, ZHANG Long, ZHANG You-Wei, LIU Di, SUN Chao, ZENG Xin-Miao, ZHAI Mao-Lin. γ-Ray Induced Reduction of Graphene Oxide in Aqueous Solution[J]. Acta Physico-Chimica Sinica, 2015, 31(10): 2016-2022. doi: 10.3866/PKU.WHXB201508102

水溶液体系中氧化石墨烯的γ射线辐射还原
石墨烯是一种碳原子以二维蜂窝状晶格结构构成的单片层材料, 由于其具有优异的电传导性、力学性能和热传导性近年来受到广泛关注. 本文采用γ射线辐射技术分别处理水溶液和对苯二胺(PPD)水溶液中的氧化石墨烯( ), 得到辐照还原氧化石墨烯(R )和胺基化修饰的还原氧化石墨烯(R N). 通过傅里叶变换红外(FTIR)光谱、X射线光电子能谱(XPS)、拉曼(Raman)光谱、X射线衍射(XRD)和热失重分析(TGA)等表征分析产物的化学结构和元素组成; 通过四探针测试仪和接触角测量仪研究产物的导电性能和亲水性. 实验结果表明, 在水溶液及PPD水溶液中γ射线辐射均可高效还原 , 还原后得到的R 和R N电导率均显著增大.PPD的胺基在辐射还原过程中还可以修饰到石墨烯的表面, 因此R N的亲水性比R 好, 但胺基的存在会干扰石墨烯表面π电子的传导, 导致其电导率下降.
English
γ-Ray Induced Reduction of Graphene Oxide in Aqueous Solution
Graphene, a one-atom-thick, two-dimensional (2D) sheet of carbon packed in a honeycomb lattice, has striking electronic, mechanical, and thermal properties. Reduced graphene oxide (R ) and amine-modified reduced graphene oxide (R N) were obtained by γ-ray induced reduction of a graphene oxide ( ) suspension in purified water and in a p-phenylene diamine (PPD) aqueous solution, respectively. The structures and elemental compositions of , R , and R N were characterized by Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction (XRD), and thermogravimetric analysis (TGA). In addition, the electrical conductivities and hydrophilic properties were conducted with four-probe resistivity meter and contact angle measurements, respectively. The results reveal that can be well reduced by γ-ray irradiation in either purified water or PPD aqueous solution. Furthermore, the electrical conductivities of obtained R and R N are enhanced. The hydrophilicity of R N is higher than that of R because the amine groups of PPD are modified on the surface of graphene nanosheets during the γ-ray induced reduction. However, the conduction of electron on the surface of graphene can be inhibited by the modified amine groups. Therefore, the electrical conductivity of R is higher than that of R N.
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