Ga和Cu/In衬底上电沉积金属Ga

张超 敖建平 王利 姜韬 孙国忠 何青 周志强 孙云

引用本文: 张超, 敖建平, 王利, 姜韬, 孙国忠, 何青, 周志强, 孙云. Ga和Cu/In衬底上电沉积金属Ga[J]. 物理化学学报, 2012, 28(08): 1913-1922. doi: 10.3866/PKU.WHXB201205153 shu
Citation:  ZHANG Chao, AO Jian-Ping, WANG Li, JIANG Tao, SUN Guo-Zhong, HE Qing, ZHOU Zhi-Qiang, SUN Yun. Electrodepositied Gallium on Gallium and Copper/Indium Substratess[J]. Acta Physico-Chimica Sinica, 2012, 28(08): 1913-1922. doi: 10.3866/PKU.WHXB201205153 shu

Ga和Cu/In衬底上电沉积金属Ga

  • 基金项目:

    教育部博士点基金(20090031110031)资助项目 (20090031110031)

摘要:

在酸性水溶液中,分别在金属Ga和Cu/In衬底上进行了Ga电沉积的研究。用循环伏安法研究了导电盐、pH值对电沉积Ga的影响。系统研究了Ga的沉积过程,发现Ga会逐渐向薄膜内部扩散,在Cu/In界面上与CuIn合金反应生成CuGa2合金。针对Cu/In薄膜和Ga薄膜是活泼金属的特点,在溶液中加入三乙醇胺有效地保护了Cu/In薄膜和Ga金属薄膜不被氧化,并且提高了Ga沉积的电流效率。在Cu/In薄膜上制备出了均匀光亮的金属Ga薄膜。对电沉积出Cu-In-Ga预置层进行了硒化处理,得到了质量较好的Cu(In1-xGax)Se2(CIGS)薄膜,并制备了太阳电池。电池效率达到了9.42%。

English

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  • 发布日期:  2012-07-10
  • 收稿日期:  2012-03-29
  • 网络出版日期:  2012-05-15
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