引用本文:
贺建, 黄运华, 张跃, 顾有松, 纪箴, 周成. ZnO纳米电缆的制备、结构和生长机理[J]. 物理化学学报,
2005, 21(06): 637-640.
doi:
10.3866/PKU.WHXB20050612
Citation: HE Jian, HUANG Yun-hua, ZHANG Yue, GU You-song, JI Zhen, ZHOU Cheng. Synthesis, Growth Mechanism and Microstructure of ZnO Nanocables[J]. Acta Physico-Chimica Sinica, 2005, 21(06): 637-640. doi: 10.3866/PKU.WHXB20050612

Citation: HE Jian, HUANG Yun-hua, ZHANG Yue, GU You-song, JI Zhen, ZHOU Cheng. Synthesis, Growth Mechanism and Microstructure of ZnO Nanocables[J]. Acta Physico-Chimica Sinica, 2005, 21(06): 637-640. doi: 10.3866/PKU.WHXB20050612

ZnO纳米电缆的制备、结构和生长机理
摘要:
以混合的锌粉和锡粉作为原料, 通过热蒸发的方法在沉积有金膜的硅基片上制备出具有“芯线-壳层”同轴结构的ZnO/SiOx纳米电缆. 扫描和透射电镜的研究表明, 这种纳米电缆的产量很高, 长度达到数个微米, 并且确认了其“芯线-壳层”的独特结构. 不同于以往ZnO一维纳米材料的三个快速生长方向〈0001〉、〈0110〉及〈2110〉, 其ZnO芯线的生长方向为[2021]. 本实验中锡粉和金膜分别作为抑制剂和催化剂, 通过控制锌粉的蒸发速率以及金硅共熔反应使ZnO纳米电缆在硅基片上得到一维生长. 这种纳米电缆可望在纳米尺度的电路、电器以及力学和光学信号的耦合和转换方面得到应用.
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关键词:
- 纳米电缆;氧化锌;氧化硅;制备;生长机理
English
Synthesis, Growth Mechanism and Microstructure of ZnO Nanocables
Abstract:
ZnO nanocables were synthesized on ld coated silicon(100) substrate by zinc powder evaporation at 550 ℃. The source materials were pure zinc and tin powders with mass ratio of 1∶1 and the experiment was carried out under a constant flow of Ar(98%)/O2(2%) gas mixture(300 sccm(standard cubic centimeters per minute) in a quartz tube.
SEM images showed that the nanocables were obtained in large-scale and the diameters and lengths of the nanocables were about 50 nm and several micrometers respectively. XRD, TEM and EDX investigations confirmed the core-shell structure, i.e. the core zone was single crystalline ZnO and the shell zone was SiOx amorphous layer. Interestingly, the ZnO core was grown along a unique direction of [2021], which was quite different from the conventional fast growth direction of〈0001〉,〈0110〉 and 〈2110〉of 1D ZnO nanoscale materials.
A possible mechanism was also proposed. Firstly, ld film served as catalyst and the nanocables grew out from the surface of Au-Si-Zn liquid alloys;secondly, tin powders were used as inhibitor to keep a low partial pressure of zinc vapor.

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