引用本文:
徐东升, 郭国霖, 桂琳琳, 张伯蕊, 秦国刚. 高多孔度多孔硅自支撑膜的制备与表征[J]. 物理化学学报,
1998, 14(07): 577-580.
doi:
10.3866/PKU.WHXB19980701
Citation: Xu Dong-Sheng, Guo Guo-Lin, Gui Lin-Lin, Zhang Bo-Rui, Qin Guo-Gang. Preparation and Characterization of Free-standing Porous Silicon Films with High Porosity[J]. Acta Physico-Chimica Sinica, 1998, 14(07): 577-580. doi: 10.3866/PKU.WHXB19980701
Citation: Xu Dong-Sheng, Guo Guo-Lin, Gui Lin-Lin, Zhang Bo-Rui, Qin Guo-Gang. Preparation and Characterization of Free-standing Porous Silicon Films with High Porosity[J]. Acta Physico-Chimica Sinica, 1998, 14(07): 577-580. doi: 10.3866/PKU.WHXB19980701
English
Preparation and Characterization of Free-standing Porous Silicon Films with High Porosity
Abstract:
The negative ion time-of- flight mass spectra of C60 benzyl derivative and C60/polystyrene mixtures were investigated by UV laser desorption. We found that the aggregation of C6o in derivatives and ndt1lres was very different. The mechanisms of the coalescence of C6o and the growth of C60 by capturing small carbon clusters were discussed. We thought that in derivatives the nascent C60 formed from the rupture of the radicals can easily coalesce into large fullerenes through co1lisions, while in mixtures C60 and small carbon clusters can grow into large fullerenes only when C60 and small carbon clusters were in proper ratio, but no coalescence of C60 was observed.
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Key words:
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Porous silicon
- / Free-standing films
- / High porosity
- / Photoluminescence
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