Citation: Pu Cong, Zhou Wei-Fang. Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Film (I)[J]. Acta Physico-Chimica Sinica, 1994, 10(03): 260-265. doi: 10.3866/PKU.WHXB19940313
VA族元素对阳极铅(II)氧化物膜半导体性质的影响(I)
用交流阻抗法研究了铅、铅砷、铅锑和铅铋金在4.5 mol·L~(-1) H_2SO_4溶液(20 ℃)中，以0.9 V(vs．Hg/Hg_2SO_4)极化2 h而形成的阳极膜的半导体性质．根据Mott-Schottky图，此种膜为n型半导体．pb，pb-lat％As，Pb-lat％Sb和Sb-lat％Bi上膜的平带电位分别为-0.95，-1.1, -1.0，-1.1 V(vs. Hg/Hg_2SO_4)；相应的施主密度分别为0.82×10~(16)，2.6×10~(16)，1.2×10~(17)和0.71×10~(16) cm~(-3).
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关键词:
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阳极铅(II)氧化物膜
- / 半导体
- / 电化学阻抗法
- / Hauffe规则
English
Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Film (I)
The semiconducting properties of the anodic plumbous oxide films formed on lead, lead-arsenic, lead-antimony and lead-bismuth alloys in 4.5 mol·L~(-1) H_2SO_4 (20 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 2 h have been studied using a. c. impedance method. From the Mott-Schottky plots, the films are demonstrated to be n-type senilconductors. The flat-band potentials of the films on Pb, Pb-lat %As, Pb-lat %Sb and Pb-lat %Bi are -0.95, -1.1, -1.0 and -1.1 V(vs. Hg/Hg_2SO_4), respectively; while the corresponding donor densities are 0.82×10~(16), 2.6×10~(16), 1.2×10~(17) and 0.71×10~(16) cm~(-3).
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