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Citation: SHAO Ya-Jie, SHEN Jie, GONG Shao-Kang, CHEN Wen, ZHOU Jing. Resistance Switching Effect of CuInS₂ Quantum Dots[J]. Chinese Journal of Inorganic Chemistry, ;2020, 36(11): 2093-2099. doi: 10.11862/CJIC.2020.225 shu

Resistance Switching Effect of CuInS₂ Quantum Dots

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

Corresponding author: ZHOU Jing, zhoujing@whut.edu.cn
Received Date: 23 April 2020
Revised Date: 21 August 2020

Figures(7)

CuInS₂ quantum dots with semiconductor effect were prepared by improved thermal decomposition method, and the uniform size of quantum dots was 4.2 nm. The Au/CuInS₂/FTO device exhibited typical bipolar resistance characteristics, with an ON/OFF switching ratio of about 10³, an ON voltage of -3.8 V and an OFF voltage of 4 V. The resistance mechanism of the device was studied by linear fitting the I-V characteristic curve of the device. The device has space-limiter charge (SCLC) conduction mechanism in high resistance state and ohmic conduction mechanism in low resistance state. The resistance characteristic of the device is mainly caused by the charge being trapped by the potential well generated by the defect in the CuInS₂ film. The charge is moved in the trap by adjusting the height of the trap barrier, which results in the generation and fracture of the conductive path, so that the device is in a high resistance state and a low resistance state.
- quantum dots,
- semiconductor,
- resistance switching,
- SCLC conduction mechanism,
- trap barrier height
1. [1]
  Jeong H Y, Kim J Y, Yoon T H, et al. Curr. Appl. Phys., 2010, 10(1):e46-e49 doi: 10.1016/j.cap.2009.12.011
2. [2]
  Xu Z, Bando Y, Wang W L, et al. ACS Nano, 2010, 4(5):2515-2522 doi: 10.1021/nn100483a
3. [3]
  Liu S Q, Wu N J, Ignatiev A. Appl. Phys. Lett., 2000, 6(19):2749-2751
4. [4]
  Han S T, Hu L, Wang X, et al. Adv. Sci., 2017, 4(8):1600435 doi: 10.1002/advs.201600435
5. [5]
  Seok J Y, Song S J, Yoon J H, et al. Adv. Funct. Mater., 2014, 24(34):5316-5339 doi: 10.1002/adfm.201303520
6. [6]
  Kannan V, Rhee J K. Appl. Phys. Lett., 2011, 99(14):143504 doi: 10.1063/1.3647629
7. [7]
  Portney N G, Martinez-morales A A, Ozkan M. ACS Nano, 2008, 2(2):191-196 doi: 10.1021/nn700240z
8. [8]
  Annoop G, Kim T Y, Lee H J, et al. Adv. Electron. Mater., 2017, 3(10):1700264 doi: 10.1002/aelm.201700264
9. [9]
  Barkhouse D A R, Pattantyus-Abraham A G, Levina L, et al. ACS Nano, 2008, 2(11):2356-2362 doi: 10.1021/nn800471c
10. [10]
  Kim D G, Tomihira K, Okahara S, et al. J. Cryst. Growth, 2008, 310(18):4244-4247 doi: 10.1016/j.jcrysgro.2008.06.059
11. [11]
  Fischbein M D, Drndic M. Appl. Phys. Lett., 2005, 86(19):193106 doi: 10.1063/1.1923189
12. [12]
  Ali S, Bae J, Lee C H, et al. Org. Electron., 2015, 25:225-231 doi: 10.1016/j.orgel.2015.06.040
13. [13]
  Kannan V, Rhee J K. J. Appl. Phys., 2011, 99(8):143504
14. [14]
  Sarkar P K, Bhattacharjee S, Prajapat M, et al. RSC Adv., 2015, 5:105661-105667 doi: 10.1039/C5RA15581A
15. [15]
  Wang D L, Ji F Z, Chen X M, et al. Appl. Phys. Lett., 2017, 110(9):093501 doi: 10.1063/1.4977488
16. [16]
  Kim D H, Wu C, Park D H, et al. ACS Appl. Mater. Interfaces, 2018, 10(17):14843-14849 doi: 10.1021/acsami.7b18817
17. [17]
  Qi M, Bai L, Xu H Y, et al. J. Mater. Chem. C, 2018, 6(8):2016-2033
18. [18]
  Chen Z, Zhang Y, Yu Y, et al. Appl. Phys. Lett., 2019, 114(18):181103 doi: 10.1063/1.5087594
19. [19]
  Zhu M, Li Y, Tian S, et al. J. Colloid Interface Sci., 2019, 534:509-517 doi: 10.1016/j.jcis.2018.09.065
20. [20]
  Arshad A, Akram R, Iqbal S, et al. Arabian J. Chem., 2019, 12(8):4840-4847 doi: 10.1016/j.arabjc.2016.10.002
21. [21]
  QU Ling-Zhi, CHENG Zhi-Qiang, DENG Da-Wei, et al. Chinese J. Inorg. Chem., 2013, 29(7):1361-1368
22. [22]
  Peng Z Y, Liu Y L, Shu W, et al. Chem. Phys. Lett., 2013, 586:85-90 doi: 10.1016/j.cplett.2013.08.109
23. [23]
  Nakamuran H, Kato W, Maeda H, et al. Chem. Mater., 2006, 18:3330-3335 doi: 10.1021/cm0518022
24. [24]
  Zhong H Z, Lo S S, Scholes G D, et al. ACS Nano, 2010, 4:5253-5262 doi: 10.1021/nn1015538
25. [25]
  Hu X, Zhang Q X, Huang X M, et al. J. Mater. Chem., 2011, 21(40):15903-15905 doi: 10.1039/c1jm12629f
26. [26]
  Kruszynska M, Borchert H, Parisi J, et al. J. Am. Chem. Soc., 2010, 132(45):15976-15986 doi: 10.1021/ja103828f
27. [27]
  Deng C, Fu B, Li L L, et al. J. Nanosci. Nanotechnol., 2020, 20(7):4533-4536 doi: 10.1166/jnn.2020.17894
28. [28]
29. [29]
  Mourdikoudis S, Liz-Marzán, Luis M. Chem. Mater., 2013, 25 (9):1465-1476 doi: 10.1021/cm4000476
30. [30]
  Kagan C R, Lifshitz E, Sargent E H, et al. Science, 2016, 353 (6302):aac5523
31. [31]
  Robertson J. Philos. Mag. B, 1991, 63(1):47-77 doi: 10.1080/01418639108224430
32. [32]
  Liu Y L, Shu W, Chen K Q, et al. ACS Catal., 2012, 2(12):2557-2565 doi: 10.1021/cs300501e
33. [33]
  33]Hsu C C, Chuang P Y, Chen Y T. IEEE Trans. Electron Devices, 2017(99):1-4
34. [34]
  Ooi P C, Lin J, Kim T W, et al. Org. Electron., 2016, 8:379-383
35. [35]
  Yang K Y, Li F S, Veeramalai C P, et al. Appl. Phys. Lett., 2017, 110:083102 doi: 10.1063/1.4976709
36. [36]
  Zhao J, Cao M H, Cheng B C, et al. J. Mater. Chem. C, 2015, 3(11):2471-2478 doi: 10.1039/C4TC02776K
37. [37]
  Shi H P, Zheng J P, Cheng B C, et al. J. Mater. Chem. C, 2017, 5:228-237
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