Citation: CHU Xiao-Fei, HE Yun-Qiu, LI Yi-Ming, HUANG He-Zhou, LIU De-Yu, CHEN Hui-Min, LI Wen-You. Sb Doped ZnSnO3 Transparent and Conducting Thin Films:Preparation and Property[J]. Chinese Journal of Inorganic Chemistry, ;2014, 30(5): 1212-1220. doi: 10.11862/CJIC.2014.169
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Undoped and Sb doped ZnSnO3 thin films were synthesized by a sol-gel spin-coating method. Acomparative study between these films was presented. The structure, electrical and optical properties of ZnSnO3 thin films doped with 0mol%, 1mol%, 8mol% and 30mol% of Sb were investigated by X-ray diffraction (XRD), field emission-scanning electron microscope (FE-SEM), X-ray photoelectron spectroscope (XPS), Hall measurement and ultraviolet-visible spectroscope (UV-Vis). The results show that all films correspond to a pure phase of ZnSnO3 structure and that Sb doped ZnSnO3 films have lower resistivity than those of undoped ZnSnO3 films. The minimum resistivity is obtained in ZnSnO3 films doped with 8.0mol% of Sb. In addition, interstitial zinc ions introduced by antimony ion doping in ZnSnO3 crystal lattice lead to a better conductivity. Furthermore, all doped ZnSnO3 films are with >80% transmittance in the region above 475 nm.
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Keywords:
- conducting;transparent;films;sol-gel
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