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Citation: DONG Jin-Kuang, XU Hai-Yan, CHEN Chen. Influence of Deposition Temperature on Growth Process and Opto-electronic Performance of Cu2O Thin Films[J]. Chinese Journal of Inorganic Chemistry, ;2014, 30(3): 689-695. doi: 10.11862/CJIC.2014.062 shu

Influence of Deposition Temperature on Growth Process and Opto-electronic Performance of Cu2O Thin Films

  • 1.

    College of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei 230022, China

  • Received Date: 29 July 2013
    Available Online: 9 October 2013

    Fund Project: 国家自然科学基金(No.20901001) (No.20901001)教育部(No.2011075) (No.2011075)安徽省教育厅(No.KJ2009B133)资助项目。 (No.KJ2009B133)

  • The nanocrystallite cuprous oxide (Cu2O) thin films with tunable crystallite size were prepared by a one-step chemical bath deposition (CBD) method, where copper sulfate was used as the copper precursor. The influence of deposition temperature on structure, crystallite size, nucleation site density, film thickness and opto-electronic properties of the thin films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis spectroscopy. The results reveal that the crystallite size, film thickness and band gap of Cu2O thin films vary in the range of 33~51 nm, 392~556 nm and 2.47~2.61 eV, respectively, with the deposition temperature change in the range of 60~90 ℃. In addition, the absorption edges of UV-Vis transmittance spectra are blue-shifted apparently with the decrease in crystallite size. Meanwhile, the growth process and the mechanism for the varied nucleation site density and particle size of Cu2O thin films were also discussed.
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